2022
DOI: 10.1088/1361-6641/aca42b
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Design and defect study of Cs2AgBiBr6 double perovskite solar cell using suitable charge transport layers

Abstract: In this work, perovskite solar cells (PSCs) based on Cs2AgBiBr6 with various electron transport layers and hole transport layers were modeled and analyzed. The device structure is FTO/ZnO/Cs2AgBiBr6/NiO/Au. PCE is practically saturated after the perovskite thickness of 700 nm. PCE declines from 21.88 % to 1.58 % when carrier lifetime decreases from 103 ns to 10−1 ns. Deep level defects at mid-band gap energy of the perovskite layer can trap both carriers, allowing greater carrier recombination. Carrier capture… Show more

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Cited by 22 publications
(11 citation statements)
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“…Table 5 represents the assessment results among previously experimental [32,33] and theoretical [34][35][36][37][38] studies on PV parameters of Cs 2 AgBiBr 6 -based PSC. Among the previous studies, Alkhammash et al were able to get the highest 21.88% PCE with the structure of FTO/ZnO/Cs 2 AgBiBr 6 /NiO/Au.…”
Section: Comparison Of Scaps-1d Results With Previous Workmentioning
confidence: 99%
See 3 more Smart Citations
“…Table 5 represents the assessment results among previously experimental [32,33] and theoretical [34][35][36][37][38] studies on PV parameters of Cs 2 AgBiBr 6 -based PSC. Among the previous studies, Alkhammash et al were able to get the highest 21.88% PCE with the structure of FTO/ZnO/Cs 2 AgBiBr 6 /NiO/Au.…”
Section: Comparison Of Scaps-1d Results With Previous Workmentioning
confidence: 99%
“…Table 5 represents the assessment results among previously experimental [ 32,33 ] and theoretical [ 34–38 ] studies on PV parameters of Cs 2 AgBiBr 6 ‐based PSC. Among the previous studies, Alkhammash et al.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…A minor amount of research work dealt with the role of particular crystal defects that trap the photoexcited carriers and hinder the charge carrier transport in Cs 2 AgBiX 6 DPs. [18][19][20][21][22] Time-resolved microwave conductance measurement on Cs 2 AgBiBr 6 polycrystalline thin film and crystal by Savenije's group, [18] initially pointed out the presence of shallow electron and hole traps in bulk Cs 2 AgBiBr 6 DPs. Soon after, T. Li et al [20] calculated the nature of defects in Cs 2 AgBiX 6 DPs based on density-functional theory.…”
Section: Introductionmentioning
confidence: 99%