Effect of crystallographic orientation of nanocrystalline TiN on structural, electrical and mechanical properties of TiN/NiTi thin films

Kumar, Ashvani; Singh, Devendra Kumar; Kumar, Ravi; Kaur, Davinder

doi:10.1016/j.jallcom.2008.12.116

Cited by 34 publications

(13 citation statements)

References 18 publications

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“…1. XRD analysis reveals the formation of martensitic phase in pristine film, and the planes corresponding to martensitic structure are marked by their Miller indices [21][22][23][24]. The lattice constants a, b, and c are estimated to be about 0.4, 0.5 and 2.9 nm, which agrees with the previously reported values of lattice constants for bulk [25].…”

Section: Structural Propertiessupporting

confidence: 87%

“…At a fluence of 1 × 10 12 ions/cm 2 , grains are more diffused, and it is difficult to observe the boundary of the grains. In the FESEM micrograph of the film irradiated at 3 × 10 12 ions/cm 2 , pyramidical shaped grains are observed, confirming the phase transformation from martensite to austenite phase [21][22][23][24]. At a fluence of 6 × 10 12 ions/cm 2 , pyramidical grains with well defined boundaries are clearly observed.…”

Section: Structural Propertiesmentioning

confidence: 57%

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Phase transformation in Ni–Mn–Sn ferromagnetic shape memory alloy thin films induced by dense ionization

et al. 2012

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The effects of 200 MeV Au ions irradiation on the structural and magnetic properties of Ni-Mn-Sn ferromagnetic shape memory alloy (FSMA) thin films have been systematically investigated. In order to understand the role of initial microstructure and phase of the film with respect to high energy irradiation, the two types of Ni-Mn-Sn FSMA films having different phases at room temperature were irradiated, one in martensite phase (Ni 58.9 Mn 28.0 Sn 13.1 ) and other in austenite phase (Ni 50 Mn 35.6 Sn 14.4 ). Transmission electron microscope (TEM) and scanning electron microscope (SEM) images along with the diffraction patterns of X-rays and electrons confirm that martensite phase transforms to austenite phase at a fluence of 6 × 10 12 ions/cm 2 and a complete amorphization occurs at a fluence of 3 × 10 13 ions/cm 2 , whereas ion irradiation has a minimal effect on the austenitic structure (Ni 50 Mn 35.6 Sn 14.4 ). Thermomagnetic measurements also support the above mentioned behaviour of Ni-Mn-Sn FSMA films with increasing fluence of 200 MeV Au ions. The results are explained on the basis of thermal spike model considering the core and halo regions of ion tracks in FSMA materials.

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Section: Structural Propertiessupporting

confidence: 87%

Section: Structural Propertiesmentioning

confidence: 57%

Phase transformation in Ni–Mn–Sn ferromagnetic shape memory alloy thin films induced by dense ionization

et al. 2012

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“…These have also been applied to tools for cutting and forming, to machinery components, aerospace and automotive parts, among others due to their high hardness, wear resistance, thermal stability, oxidation resistance, and chemical stability [1][2][3][4]. To enhance the performance of particular tools, dies, and molds for several applications, hard coating technology is continually being developed.…”

Section: Introductionmentioning

confidence: 99%

Structure and mechanical properties of (TiVCr)N coatings prepared by energetic bombardment sputtering with different nitrogen flow ratios

Tsai

Huang

Lin

et al. 2011

Journal of Alloys and Compounds

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“…Kasukabe et al [14] showed that the (001)-and (110)-oriented TiN thin films can be grown by N-implantation. Kumar et al [15] demonstrated that the preferential orientation of the TiN films was observed to change from (111) to (200) with the change in nature of sputtering gas. Jones et al [16] obtained the preferred (111)-oriented TiN thin films deposited by radio frequency (RF) reactive magnetron sputtering.…”

Section: Introductionmentioning

confidence: 99%

Preparation and characterization of single (200)-oriented TiN thin films deposited by DC magnetron reactive sputtering

Wang

Lai

2015

Rare Met.

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Single (200)-oriented TiN thin films were deposited on quartz substrate by direct current (DC) magnetron reactive sputtering process at a wide range of substrate temperature from 200 to 600°C. The effects of sputtering pressure and substrate temperature on the crystalline nature, morphology, electrical and optical properties of the deposited thin films were analyzed by X-ray diffraction (XRD), atomic force microscopy (AFM), four-point resistivity test system and ultraviolet visible near-infrared (UV-Vis-NIR) spectroscopy, respectively. The results show that single (200)-oriented TiN thin films can be obtained at a wide range of substrate temperature from 200 to 600°C with the grain size increasing from 35.9 to 64.5 nm. The resistivity of the product is as low as 95 lXÁcm, and the value of the optical reflectance is above 68 % in the near-infrared (NIR) range of 760-1500 nm.

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Effect of crystallographic orientation of nanocrystalline TiN on structural, electrical and mechanical properties of TiN/NiTi thin films

Cited by 34 publications

References 18 publications

Phase transformation in Ni–Mn–Sn ferromagnetic shape memory alloy thin films induced by dense ionization

Phase transformation in Ni–Mn–Sn ferromagnetic shape memory alloy thin films induced by dense ionization

Structure and mechanical properties of (TiVCr)N coatings prepared by energetic bombardment sputtering with different nitrogen flow ratios

Preparation and characterization of single (200)-oriented TiN thin films deposited by DC magnetron reactive sputtering

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