1998
DOI: 10.1007/s11664-998-0015-5
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Effect of constrained growth on defect structures in microgravity grown CdZnTe boules

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Cited by 28 publications
(4 citation statements)
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“…7,8 The dislocations produce a strain field in the surrounding regions, consequently leading to an enhanced intensity compared with the rest of the crystal. 9 Accordingly, diffraction contrast is generated, revealing the dislocations and strained regions inside the crystal. The presence of the cell-like structures signifies that the dislocations propagate and connect with each other in these localized regions.…”
Section: Resultsmentioning
confidence: 99%
“…7,8 The dislocations produce a strain field in the surrounding regions, consequently leading to an enhanced intensity compared with the rest of the crystal. 9 Accordingly, diffraction contrast is generated, revealing the dislocations and strained regions inside the crystal. The presence of the cell-like structures signifies that the dislocations propagate and connect with each other in these localized regions.…”
Section: Resultsmentioning
confidence: 99%
“…Significant lowering of the dislocation density was registered in the area of contact-free crystal growth. Synchrotron X-ray topography characterization of CdZnTe boules grown on US Space Shuttle mission USML-1 (Raghothamachar et al, 1998) and of CdTe crystals grown in microgravity during the STS-95 mission (Fiederle et al, 2004) demonstrated the existence of dewetting areas of the crystals and their improved quality compared with the Earth-grown reference sample. These results clearly verify that contact with the ampoule wall plays an important role in the incidence of crystal imperfections.…”
Section: Introductionmentioning
confidence: 99%
“…Cd 1-x Zn x Te (x = 0.04) nearly lattice matches with Hg 1-y Cd y Te (MCT) for all values of y, so it is mainly used as a substrate material for the epitaxial growth of MCT infrared focal plane arrays (IRFPAs). The main advantages of the Cd 0.96 Zn 0.04 Te are its infrared transparency, which allows backside illumination of the MCT infrared detector arrays (KENNEDY et al 1990;RAGOTHAMACHAR et al 1998). Recently Cd 1-x Zn x Te (x = 0.04) is used as the surface passivation layer for MCT infrared detectors (LEE et al 1997;LEE et al 1998).…”
Section: Introductionmentioning
confidence: 99%