Investigation of Cadmium Manganese Telluride Crystals for Room-Temperature Radiation Detection

Abstract

Cadmium manganese telluride (CMT) has high potential as a material for room-temperature nuclear-radiation detectors. We investigated indium-doped CMT crystals taken from the stable growth region of the ingot and compared its characteristics with that from the last-to-freeze region. We employed different techniques, including synchrotron white-beam x-ray topography (SWBXT), current-voltage (I-V) measurement, and low-temperature photoluminescence spectra, and we also assessed their responses as detectors of radiation exposure. The crystal from the stable growth region proved to be superior to that from the last-to-freeze region; it is a single-grain crystal, free of twins, and displayed a resistivity higher by one order of magnitude. The segregation of indium dopant in the ingot might be responsible for its better resistivity. Furthermore, we recorded a good response in the detector fabricated from the crystal taken from the stable growth region; its (ls) e value was 2.6 9 10 À3 cm 2 /V, which is acceptable for thin detectors, including their application in medicine.

Investigating the Components of Signals Produced by the Pockels CCD Imaging Technique in CdZnTe

“…Both CMT and CdTe may also be suitable for the Pockels technique. CMT has potentially fewer defects due to a lower segregation coefficient and lower levels of manganese in comparison to zinc to achieve the same band-gap energy range (1.5-2.2 eV), however if this comes at the expense of dislocations which are necessary for birefringence then it may not as suitable as CZT [16]. CdTe generally has slightly higher hole carrier mobility than CZT [17] which potentially means space charge becomes less of an issue as fewer holes will be trapped.…”

Structural, electrical, and optical properties of CdMnTe crystals grown by modified floating-zone technique

“…[1][2][3] Recently, CMT has attracted increasing interest since it is considered a promising material for the fabrication of high-performance room-temperature x-ray and gammaray detectors. [2][3][4][5] Such detectors offer great potential for nonproliferation applications, medical imaging, astrophysics research, and monitoring industrial processes, because they are able to operate at ambient temperatures, while providing a high detection efficiency and good energy resolution. [6,7] Compared with cadmium zinc telluride (CdZnTe or CZT), a current leading material in such applications, CMT offers several distinct advantages that make it a good candidate in this field.…”

Comparison of cadmium manganese telluride crystals grown by traveling heater method and vertical Bridgman method

“…Cd 1-x Mn x Te (CdMnTe) is a new compound semiconductor for room-temperature X-and γ -ray detector applications, with advantages of large band gap (1.53 ß 2.54 eV), high average atomic number (ß 50) and high density (5.2 ß 5.9 g/cm 3 ), etc. [1][2][3].…”

“…[1][2][3]. The CdMnTe detector was demonstrated to be a good candidate to compete with CdTe and Cd 1-x Zn x Te detectors in nuclear detection applications, such as: nuclear medical, national security, environmental safety, and space science [4][5][6].…”

“…Cd 1 ‐x Mn x Te (CdMnTe) is a new compound semiconductor for room‐temperature X‐ and γ‐ray detector applications, with advantages of large band gap (1.53 ∼ 2.54 eV), high average atomic number (∼ 50) and high density (5.2 ∼ 5.9 g/cm 3 ), etc. . The CdMnTe detector was demonstrated to be a good candidate to compete with CdTe and Cd 1 ‐x Zn x Te detectors in nuclear detection applications, such as: nuclear medical, national security, environmental safety, and space science .…”