2017
DOI: 10.1134/s1027451017010128
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Effect of Co+-ion implantation on the composition and properties of free Si–Cu nanofilm structures

Abstract: Abstract⎯The effect of Co + -ion implantation on the surface composition and the depth distribution profiles of atoms in a Si-Cu (100) heterostructure is investigated. After heating of the ion-implanted sample, a 50-60 Å thick CoSi 2 film is formed. It is revealed that after ion implantation the penetration depth of Cu atoms in Si becomes twice as large.

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Cited by 4 publications
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“…When implanting small doses (D  10 16 ioncm -2 ) of the alloying element, dilute ion-implanted alloys with an impurity element concentration of ~ 1 at. % are formed [10][11][12][13][14][15]. The depth of the maximum content of the alloying element in the surface layer of the crystal is mainly determined by the ion energy of the impurity element [17,18].…”
Section: Resultsmentioning
confidence: 99%
“…When implanting small doses (D  10 16 ioncm -2 ) of the alloying element, dilute ion-implanted alloys with an impurity element concentration of ~ 1 at. % are formed [10][11][12][13][14][15]. The depth of the maximum content of the alloying element in the surface layer of the crystal is mainly determined by the ion energy of the impurity element [17,18].…”
Section: Resultsmentioning
confidence: 99%