Modifying the interfacial conditions of magnetic layers by capping with overlayers can efficiently enhance the magnetic functionality of a material. However, the mechanisms responsible for this are closely related to the crystalline structure, compositional combinations, and interfacial quality, and are generally complex. In this contribution, we explored the use of Ag ultrathin overlayers on annealed . A method for preparing magnetic layers with different levels of enhanced magnetic anisotropy energy was developed. The method essentially involves simply modifying the contact area of the metallic/magnetic interface. A rougher interface results in a larger contact area between the Ag and Ni layers, resulting in an increase in magnetic anisotropy energy. Moreover, post-annealing treatments led to the segregation of Ni atoms, thus making the enhancement in the coercive force even more efficient. A model permits an understanding of the contact area and a strategy for enhancing the magnetic anisotropy energy and the coercive force was developed. Our approaches and the developed model promise to be helpful in terms of developing potential applications of ultrathin magnetic layers in the area of spintronics.
Silica (SiO2, silicon dioxide—a dielectric layer commonly used in electronic devices) is widely used in many types of sensors, such as gas, molecular, and biogenic polyamines. To form silica films, core shell or an encapsulated layer, silane has been used as a precursor in recent decades. However, there are many hazards caused by using silane, such as its being extremely flammable, the explosive air, and skin and eye pain. To avoid these hazards, it is necessary to spend many resources on industrial safety design. Thus, the silica synthesized without silane gas which can be determined as a silane-free procedure presents a clean and safe solution to manufactures. In this report, we used the radio frequency (rf = 13.56 MHz) plasma-enhanced chemical vapor deposition technique (PECVD) to form a silica layer at room temperature. The silica layer is formed in hydrogen-based plasma at room temperature and silane gas is not used in this process. The substrate temperature dominates the silica formation, but the distance between the substrate and electrode (DSTE) and the methane additive can enhance the formation of a silica layer on the Si wafer. This silane-free procedure, at room temperature, is not only safer and friendlier to the environment but is also useful in the fabrication of many types of sensors.
Compound formation at a metal/semiconductor interface plays crucial roles in the properties of many material systems. Applications of Ni silicides span numerous areas and have the potential to be used as new functionalities. However, the magnetic properties of ultrathin Ni layers on silicon surfaces and related chemical compositions at the interface are not fully understood and the influence of Ag additives on the reactivity of Ni/Si(111) remain unclear. We report herein on the fact that the dominant species produced at the interface is NiSi, which is produced by the spontaneous formation of strong bonds between Ni and Si atoms. Assuming that a Ni layer is formed over a NiSi layer with the total coverage as a constraint, we established a chemical shift-related concentration model that, in effect, represents a practical method for determining the amount of ultrathin Ni silicides that are produced at the buried interface. The formation of Ag-Si particles provide a viable strategy for enhancing silicide formation via a specific interaction transfer mechanism, even at room temperature. The mechanism is related to differences in the enthalpies of formation ΔH
Ag-Si
, ΔH
Ni-Ag
, and ΔH
Ni-Si
, for these phases and provides insights into strategies for producing ultrathin silicides at a buried interface.
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