Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

Umirzakov, B. E.; Рузибаева, М. К.; Исаханов, З. А.; Erkulov, R. M.

doi:10.1134/s1063784219060239

Cited by 3 publications

(2 citation statements)

References 9 publications

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“…So far, the differences in stomatal structure and function in processing the evolutionary physiology of Bromelia plants may be the key to the diversity of Bromelia plants in ecophysiological strategies. Since humidity is a key factor affecting the niche of pineapples, E. Umirzakov focused on studying the response of stomata to vapour pressure deficit (VPD) [3]. The results of N. Kurochkina study showed the sensitivity of C3 Bromelia stomata conductance and assimilation rate to VPD in eight different growth patterns and physiological and ecological strategies, and parameterized the stomatal response kinetics to VPD step changes.…”

Section: Introductionmentioning

confidence: 99%

Formation of Iron Film on Plant Root Surface and Its Nutrition and Eco-environmental Effects

2022

AJEB

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The nutritional absorption of plants is mainly completed by the roots, and the formation of iron films in the roots of plants directly affects the absorption of nutrients. A good ecological environment can promote the formation of iron films on the root surface of plants, and thus accelerate the absorption of nutrients by plants. However, a bad ecological environment will endanger the growth of plants. If plants are in a polluted ecological environment for a long time, then plants will absorb harmful substances. If they finally reach people's tables, they will inevitably have a great impact on people's health and safety. The research found in this paper found that heavy metals have a direct effect on the growth of rice. The experimental research analysis found that the concentration of MeHg in DCB of three varieties of rice was 1.8-2.6 times that of + P treatment under -P treatment, indicating that the iron film had an effect on MeHg in solution. Has a very strong adsorption effect. That is, heavy metals are very easily absorbed by the iron surface of the plant roots.

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Section: Introductionmentioning

confidence: 99%

Formation of Iron Film on Plant Root Surface and Its Nutrition and Eco-environmental Effects

2022

AJEB

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“…One of the most popular materials in modern micro-and nanoelectronics is monocrystalline silicon and silicon dioxide [1,2]. Recently, thanks to the creation of quantum-dimensional structures on silicon [3][4][5], the di culty of using the above materials in photoelectronics, due to their low probability of radiative recombination, has been overcome [6][7]; thus, a new impetus has been obtained for its widespread use in the aforementioned elds of science and technology [8]. In the production of silicon integrated circuits, in addition to the quality of the surface structure, the choice of the crystallographic orientation of the substrate crystals is of great importance [9][10][11]; for example, the (111) planes are oxidized faster than the (100) planes due to the high surface packing density of atoms capable of entering the oxidation reaction [12].…”

Section: Introductionmentioning

confidence: 99%

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Sharopov

Kaur

Kurbanov

et al. 2021

Silicon

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A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10 -9 Pa, the silicon surface begins to oxidize again within 10 min.

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Controlling the Low-Temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Sharopov

Kaur

Kurbanov

et al. 2021

Preprint

View full text Add to dashboard Cite

A comparative study is carried out for etching a surface with negative and positive ions, and the results show completely opposite physical processes occur on a silicon surface. Irradiation with positive ions exhibits oxide removal, while irradiation with negative ions shows an intense oxidation of the sample surface. Technology for low-temperature ion cleaning and the electron-spectrometric control of silicon wafers has been developed. This technology has been shown that only irradiation with caesium ions followed by annealing at 650 °C leads to an atomically clean silicon surface for several minutes, which is dependent on the pressure of residual gases under vacuum. After cleaning in a vacuum of 10-9 Pa, the silicon surface begins to oxidize again within 10 min.

show abstract

Formation of Nanodimensional SiO2 Films on the Surface of a Free Si/Cu Film System by $${\text{O}}_{2}^{ + }$$ Ion Implantation

Cited by 3 publications

References 9 publications

Formation of Iron Film on Plant Root Surface and Its Nutrition and Eco-environmental Effects

Formation of Iron Film on Plant Root Surface and Its Nutrition and Eco-environmental Effects

Controlling the Low-temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

Controlling the Low-Temperature Ionic Purification of a Silicon Surface by Electron Spectroscopy

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