Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

Hatzopoulos, A.A.; Arpatzanis, N.; Tassis, D. H.; Dimitriadis, C. A.; Templier, F.; Kamarinos, G.

doi:10.1109/ted.2007.894597

Cited by 12 publications

(7 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…7, for standard a-Si:H TFTs, the field-effect mobility does not change, but the threshold voltage increases with the increasing channel width. Others made a similar observation [9]. Hence, we expect that the threshold voltage increase will be more severe if the channel width increases to a value higher than 1000 µm to be comparable to the total width of HEX-4 or HEX-8 a-Si:H TFT (Table I).…”

Section: A Electrical Characteristics Of Multiple A-si:h Hex-tftssupporting

confidence: 62%

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Lee

Yoo²,

Kim³

et al. 2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

Abstract-Inverted stagger hexagonal hydrogenated amorphous silicon thin-film transistors (a-Si:H HEX-TFTs) were fabricated with a five-photomask process used in the processing of the active-matrix liquid crystal displays. We show that the output current of a-Si:H HEX-TFTs connected in parallel increases linearly with their number within a given pixel circuit. Current-voltage measurements indicate that a high ON-OFF current ratio and a low subthreshold slope can be maintained for multiple HEX-TFTs connected in parallel, whereas the field-effect mobility and threshold voltage remain identical to a single a-Si:H HEX-TFT. Due to a unique device geometry, an enhanced electrical stability and a larger pixel aperture ratio can be achieved in the multiple a-Si:H HEX-TFT in comparison to a standard single a-Si:H TFT having the same channel width. These HEX-TFT electrical characteristics are very desirable for active-matrix organic light-emitting displays.Index Terms-Hexagonal thin-film transistor (HEX-TFT), hydrogenate amorphous silicon (a-Si:H), large channel width, multiple transistor, parallel connected.

show abstract

Section: A Electrical Characteristics Of Multiple A-si:h Hex-tftssupporting

confidence: 62%

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Lee

Yoo²,

Kim³

et al. 2008

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…For instance, it is suggested that the corner parasitic transistor with lower V th derived from corner edges of channel can be triggered before the main transistor. 20 More recently, such a curve seems to be the combination of a dominant transistor and a parasitic transistor, as a result of structural or environmental factors that promote charge trapping in metal oxide-based TFTs. 21−23 Figure 4 shows cross-sectional high-resolution transmission electron microscopy (HR-TEM) images of IGZO TFT with multistacked layers captured to investigate the novel sensing mechanism, which is different from that used in our earlier work.…”

Section: Resultsmentioning

confidence: 99%

Electrical Responses of Artificial DNA Nanostructures on Solution-Processed In-Ga-Zn-O Thin-Film Transistors with Multistacked Active Layers

Jung

Kim

Yoon

et al. 2012

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

show abstract

“…If the field is increased, electrons can be extracted from state directly by the tunnel effect through the triangular barrier (Field Emission) giving rise to a Fowler-Nordheim current. We have shown that leakage current in µc-Si:H is dominated by Poole-Frenkel current in the range of medium field (10).…”

Section: Ecs Transactions 22 (1) 49-56 (2009)mentioning

confidence: 90%

“…This is the so-called band-toband tunnelling. In this case, drain current can be expressed as follows (10):…”

Section: Ecs Transactions 22 (1) 49-56 (2009)mentioning

confidence: 99%

From Amorphous-Si Thin-Film-Transistors to Single Crystal-Si Transistors: Influence of Si Crystallinity on Device Properties

Templier

2009

ECS Trans.

View full text Add to dashboard Cite

Silicon, under its various phases from amorphous (a-Si:H) to monocrystalline, with intermediates microcrystalline (µc-Si:H) and polycrystalline, can be used to manufacture devices with very different characteristics. We have investigated some links between device characteristics and material crystallinity. Carrier mobility is strongly dependant on defects with energy levels within the semiconductor bandgap, and these defects are reduced when crystal order is increased. The reduced drain leakage current in a-Si:H in comparison with microcrystalline (µc-Si:H) Thin-Film Transistors (TFTs) is explained by differences in material properties related to crystallinity. Finally, it is shown that µc-Si:H TFTs exhibit better threshold voltage (Vth) stability than a-Si:H ones. Investigation of Vth drift mechanisms indicates that this is related to improvement of the semiconductor material quality.

show abstract

Effect of Channel Width on the Electrical Characteristics of Amorphous/Nanocrystalline Silicon Bilayer Thin-Film Transistors

Cited by 12 publications

References 11 publications

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Hexagonal a-Si:H TFTs: A New Advanced Technology for Flat-Panel Displays

Electrical Responses of Artificial DNA Nanostructures on Solution-Processed In-Ga-Zn-O Thin-Film Transistors with Multistacked Active Layers

From Amorphous-Si Thin-Film-Transistors to Single Crystal-Si Transistors: Influence of Si Crystallinity on Device Properties

Contact Info

Product

Resources

About