Electrical Responses of Artificial DNA Nanostructures on Solution-Processed In-Ga-Zn-O Thin-Film Transistors with Multistacked Active Layers

Abstract

We propose solution-processed In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) with multistacked active layers for detecting artificial deoxyribonucleic acid (DNA). Enhanced sensing ability and stable electrical performance of TFTs were achieved through use of multistacked active layers. Our IGZO TFT had a turn-on voltage (V(on)) of -0.8 V and a subthreshold swing (SS) value of 0.48 V/decade. A dry-wet method was adopted to immobilize double-crossover DNA on the IGZO surface, after which an anomalous hump effect accompanying a significant decrease in V(on) (-13.6 V) and degradation of SS (1.29 V/decade) was observed. This sensing behavior was attributed to the middle interfaces of the multistacked active layers and the negatively charged phosphate groups on the DNA backbone, which generated a parasitic path in the TFT device. These results compared favorably with those reported for conventional field-effect transistor-based DNA sensors with remarkable sensitivity and stability.

P‐29: DNA Sensing Systems on Flexible Substrate using Solution‐processed Oxide Thin‐film Transistors

“…The amount of supplied carriers followed thee DNA concentration, leading to a subsidiary negative shift of V on and increase of I D , and even conductor-like behaviour in the 400 nM case. This donor effect is tremendous enough that the electrostatic force from the phosphate groups can be ignored [5,8]. To figure out the sensing ability of our biosensors to diverse types of DNA, Figure 4 shows the sensing behaviour upon the DNA A oligomer with 50 mers.…”

Printed Electronics Based on Inorganic Semiconductors: From Processes and Materials to Devices

“…Similarly, with ferroelectric gating (using a stack of (Bi,La) 4 Ti 3 O 12 (BLT) and Pb (Zr,Ti)O 3 (PZT)) field‐effect mobility of 6.5 cm 2 V −1 s −1 and a large nonvolatile memory window of output voltage of the order of several volts have been achieved . A summary of processing as well as performance parameters of various solution‐processed/printed amorphous oxides TFTs are presented in Table 4 …”

An all-solid-state heterojunction oxide transistor for the rapid detection of biomolecules and SARS-CoV-2 spike S1 protein

“…Alternative technologies such as solid-state thin-film transistors (TFT) made of metal oxide semiconductors offer scalable manufacturing and intriguing physical properties [14][15][16][17] . However, due to parasitic gating effects and associated performance deterioration [18][19][20][21] , the use of metal oxide transistors as biosensors has remained limited with most effort dedicated on liquid-gated transistors (LGTs) 6,[22][23][24] . In spite of being one of the most studied device, LGT biosensors face the detrimental Debye screening effect 6,25,26 a direct result of the operating principles that rely on electrochemical reactions 27 , or on the movement of analytes 28 , upon liquid-gating.…”