Effect of Au/Ge substrate on the properties of GaSe

Qasrawi, A.F.; Abdallah, M

doi:10.1016/j.ijleo.2018.04.122

Cited by 3 publications

(1 citation statement)

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“…When the device was illuminated with a 532 nm radiation, a responsivity of~3 A/W and a response time of 50 ms were obtained [111]. On the basis of mobility, the mobility of GaSe has been reported and varies between 0.4-50 cm 2 /Vs [128][129][130][131][132], which is of similar order to that of MoS 2 and in accordance with the observed response/recovery time constants. A study that applies graphene as an electrode with device structure MoS 2 /h-BN/graphene was developed on SiO 2 /Si substrate where h-BN is used as an insulating layer between graphene electrode and MoS 2 photo-absorber as shown in Figure 10i [133].…”

Section: Performance Of Photodetectors Based On Mossupporting

confidence: 74%

Device Architecture for Visible and Near-Infrared Photodetectors Based on Two-Dimensional SnSe2 and MoS2: A Review

et al. 2020

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While band gap and absorption coefficients are intrinsic properties of a material and determine its spectral range, response time is mainly controlled by the architecture of the device and electron/hole mobility. Further, 2D-layered materials such as transition metal dichalogenides (TMDCs) possess inherent and intriguing properties such as a layer-dependent band gap and are envisaged as alternative materials to replace conventional silicon (Si) and indium gallium arsenide (InGaAs) infrared photodetectors. The most researched 2D material is graphene with a response time between 50 and 100 ps and a responsivity of <10 mA/W across all wavelengths. Conventional Si photodiodes have a response time of about 50 ps with maximum responsivity of about 500 mA/W at 880 nm. Although the responsivity of TMDCs can reach beyond 104 A/W, response times fall short by 3–6 orders of magnitude compared to graphene, commercial Si, and InGaAs photodiodes. Slow response times limit their application in devices requiring high frequency. Here, we highlight some of the recent developments made with visible and near-infrared photodetectors based on two dimensional SnSe2 and MoS2 materials and their performance with the main emphasis on the role played by the mobility of the constituency semiconductors to response/recovery times associated with the hetero-structures.

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