Design and characterization of Ge/SeO2 heterojunctions as tunneling thin film transistors

Khusayfan, Najla M.; Khanfar, Hazem K.; Alharbi, S. R.

doi:10.1016/j.ijleo.2022.169520

Cited by 8 publications

(2 citation statements)

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“…1b was recorded as 3.64 eV that in a nice agreement with Khusayfan et al , 2022. 47 Otherwise, the band gap of ZnO@SeO bimetallic was increased to 5.21 eV in comparison with both individual nanoparticle values that could be due to the relationship between the bandgap of nanocrystals and effective mass charge carriers. 20 With other words, the binding of the NPs could be attracted via a electrostatic force that tying the electrons and increase of the band gap value as well.…”

Section: Resultsmentioning

confidence: 91%

Sustainable biosynthesized bimetallic ZnO@SeO nanoparticles from pomegranate peel extracts: antibacterial, antifungal and anticancer activities

et al. 2023

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Section: Resultsmentioning

confidence: 91%

Sustainable biosynthesized bimetallic ZnO@SeO nanoparticles from pomegranate peel extracts: antibacterial, antifungal and anticancer activities

et al. 2023

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“…Slight redshift in the value of the energy bandgap upon inversion of Pt nanosheets between glass and MgSe is assigned to orbital overlapping between MgSe and Pt metal. [24] Pt with the electronic configuration 4f 14 5d 9 6s 1 can reach orbitals of Mg (2p 6 3s 2 ) and Se (3d 10 4s 2 4p 4 ) forcing the formation of overlapping orbitals that bends the valence band up (or conduction and is bent down) resulting in a shrinkage in the energy band gap. [25] The effect of Pt nanosheets on the dielectric performance of MgSe thin films is observed from the dielectric spectra presented in Figure 3c.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Algarni

Qasrawi

Khusayfan

2022

Cryst. Res. Technol.

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Magnesium selenide thin films are coated onto glass and semitransparent Pt substrates (nanosheets) by the vacuum evaporation technique under a vacuum pressure of 10 −5 mbar. The effect of Pt nanosheets of thicknesses of 100 nm on the structural, compositional, optical, and electrical properties of MgSe is explored. It is found that platinum nanosheets enhance the light absorbability in the visible and infrared ranges of light. They slightly redshift the energy bandgap and decrease the dielectric constant. The strong interaction between Pt and MgSe increases the electrical conductivity by five orders of magnitude. Pt forms shallow impurity levels in the energy bandgap of MgSe allowing the tunneling process at the Pt/MgSe interfaces. Practically, a Pt/MgSe/Pt tunneling type device is fabricated and tested by the microwave impedance spectroscopy technique. It is found that Pt/MgSe/Pt devices can exhibit resonance-antiresonance and negative capacitance effects which are important in electronic circuits as parasitic capacitance cancelers, signal amplifiers, and noise reducers. In addition, evaluation of the cutoff frequency spectra has shown the ability of using the Pt/MgSe/Pt devices as microwave resonators appropriate for 5G/6G technologies. A cutoff frequency larger than 70 GHz can be achieved by imposing ac signal of amplitude of 0.10 V.

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Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology

Qasrawi

2024

Physica Status Solidi (a)

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Herein, films of barium antimonides (BaSb) are fabricated by a thermal deposition technique under a vacuum pressure of 10−5 mbar. BaSb films exhibit orthorhombic lattice. Over a wide range of scans, the films are mostly stoichiometric, displaying atomic contents of 50.17 and 49.83 at% for Ba and Sb, respectively. Morphological analyses of these films show the growth of large grains with sizes ranging from 1.64 to 4.14 μm. Dynamic electrical measurements on Ag/BaSb/Ag films are conducted in the frequency domain of 0.01–1.80 GHz. The films display features of voltage‐controlled negative capacitance source (VCNC) and resonance–antiresonance peaks at a critical frequency of 1.64 GHz. Lorentz models spectral analyses on these peaks indicate that they correspond to a high‐frequency capacitance value of 2.8 nF, a density of oscillators of 4 × 1010 cm−3, and a scattering time constant of τ = 100 ns. Additionally, Ag/BaSb/Ag films show a wide variety in the cutoff frequency spectra, making them suitable for high‐frequency applications. The cutoff frequency varies from 2.6 GHz to 1.0 THz as driving frequency increases from 1.0 to 1.64 GHz. The features of VCNC sources, resonance–antiresonance behavior, and high cutoff frequency make BaSb thin films promising for thin‐film transistors and 6 G technology applications.

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Design and characterization of Ge/SeO2 heterojunctions as tunneling thin film transistors

Cited by 8 publications

References 30 publications

Sustainable biosynthesized bimetallic ZnO@SeO nanoparticles from pomegranate peel extracts: antibacterial, antifungal and anticancer activities

Sustainable biosynthesized bimetallic ZnO@SeO nanoparticles from pomegranate peel extracts: antibacterial, antifungal and anticancer activities

Enhanced Optical and Electrical Interactions at the Pt/MgSe Interfaces Designed for 6G Communication Technology

Characterization and High‐Frequency Applications of Barium Antimonide Thin Films for Voltage‐Controlled Negative Capacitance and 6G Technology

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