Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN<sub><i>x</i></sub>Films at Low Substrate Temperatures

Heya, Akira; Niki, Toshikazu; Takano, Masahiro; Yonezawa, Yasuto; Minamikawa, Toshiharu; Muroi, Susumu; Minami, Shigehira; Izumi, Akira; Masuda, Atsushi; Umemoto, Hironobu; Matsumura, Hideki

doi:10.1143/jjap.43.l1546

Cited by 13 publications

(10 citation statements)

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“…Similar results have been obtained in SiH 4 /C 2 H 2 /H 2 mixed systems 22. The properties of SiN x films can be improved by the addition of H 2 to SiH 4 /NH 3 mixtures 23–27. The etching rate of the deposited films decreases while the breakdown electric field increases.…”

Section: Importance Of H Atoms In Cvd Processessupporting

confidence: 81%

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Umemoto¹

2010

Chemical Vapor Deposition

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Radical species, including atomic hydrogen, play an important role in the CVD process to prepare high-quality thin solid films. Detailed information on the absolute densities of these radicals under various conditions is needed in order to understand the chemical kinetics involved and to control the deposition processes. This article reviews the production mechanisms and the gasphase diagnostic techniques for H atoms in catalytic CVD (also called hot-wire CVD) and plasma-enhanced (PE)CVD processes. Experimentally determined absolute H-atom densities in typical CVD processes are compiled in a table. Under suitable conditions, the steady-state H-atom density can be increased up to 10 17 cm À3. Procedures for producing and detecting vibrationally excited H 2 molecules, which can be another active species in CVD processes, are also discussed.

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Section: Importance Of H Atoms In Cvd Processessupporting

confidence: 81%

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Umemoto¹

2010

Chemical Vapor Deposition

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“…Hydride content is mainly determined by the amount of atomic hydrogen in the gas phase in low-temperature CVD processes, such as Cat-CVD. 13) In contrast, this hydride content depends on thermal desorption rate in thermal CVD. In this case, due to high substrate temperatures, H 2 desorption takes place not only on surfaces but also from the inside.…”

Section: Discussionmentioning

confidence: 99%

Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures

Takano

Niki

Heya

et al. 2005

Jpn. J. Appl. Phys.

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This article covers acoustic design from two main aspects: the design of acoustical devices such as microphones, loudspeakers, etc, and the principles for reduction of sound through partitions, in rooms, etc. These sections are preceded by a description of the behaviour of sound waves and vibrating bodies, and an outline of human response to sound. Finally, special problems in silencing and in the diagnostic use of sound are described. Acoustic design principlesVector velocity of element of source Absorption coefficient of a surface = p / p~, fraction of critical damping Angle of directivity of a dipole source Coefficient of resistive force in a vibrating system Value of p for critical damping of a vibrating system Frequencies of resonance in a rectangular room Density of air Phase lags in vibrating systems Angular frequency. 147 IntroductionThere are two main aspects to acoustical design. The first is concerned with the principles which can be applied to the practical realization of devices such as microphones, loudspeakers, etc, to enable them to work correctly: the second is concerned with the design of devices or structures to reduce noise. Since most problems of noise concern the human subject, the latter aspect of the work necessitates a knowledge of human reaction to noise.This paper deals only with acoustics in the audible region, approximately 20-20000 Hz. Ultrasonics is today virtually a technology on its own. both in communications and in 'sonics'-the term used for the application to engineering devices; while infrasonics (acoustical phenomena below the threshold of hearing) is beginning to develop.The first part of the paper deals with the behaviour of sound waves and the characteristics of random noise. Spectrum measurements and sound-level measurements are described, and human response to noise-ranging from annoyance, through speech interference, to damage to hearing-is outlined.The second part deals with the design of acoustical instruments such as microphones and loudspeakers; this is introduced by a section on the powerful technique of acoustical analogies.The third part deals with design from the point of view of the control of sound waves in auditoria and in transmission through partitions; anti-vibration methods are also described, and the section concludes with a brief review of special methods in silencing and in the diagnostic use of noise. Acoustic sources and fields 2.1. Magnitudes in acousticsOne of the problems in dealing with acoustics is that the physical quantities are so small. The often-quoted statement that the acoustical energy produced by the shouting of a Cup Final crowd would heat enough water to make a cup of tea is accurate enough; even the shouting voice produces an acoustic power of only milliwatts. Of course the aerodynamic energy-to say nothing of other forms of energy-in the process is vastly greater, but conversion efficiencies from aerodynamic to acoustical energy are in the region of 10-4 or 10-5 for many processes.It follows therefore that most acoustical measuremen...

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“…In Cat-CVD processes, source gas molecules are decomposed by catalytic cracking reactions on a heated catalyzer placed near the substrate [2]. So far, highly moisture-resistive SiN x films on Si substrates have been obtained at substrate temperatures between 20 and 100°C using a mixture of SiH 4 , NH 3 and H 2 as a source material [3][4][5]. The stress of SiN x films on Si substrates can be controlled from compressive to tensile by changing the deposition conditions and the stress is, in general, lower than 100 MPa [6].…”

Section: Introductionmentioning

confidence: 99%

“…The flow rate of SiH 4 , NH3 and H 2 was 10, 10 and 30 sccm, respectively. The substrate temperature was 65°C.…”

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confidence: 99%

Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

Heya

Minamikawa

Niki³

et al. 2008

Thin Solid Films

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Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_xFilms at Low Substrate Temperatures

Cited by 13 publications

References 1 publication

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures

Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

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Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiNxFilms at Low Substrate Temperatures

Cited by 13 publications

References 1 publication

Production and Detection of H Atoms and Vibrationally Excited H2 Molecules in CVD Processes

Production and Detection of H Atoms and Vibrationally Excited H2 Molecules in CVD Processes

Preparation of Low-Stress SiNx Films by Catalytic Chemical Vapor Deposition at Low Temperatures

Coverage properties of SiNx films prepared by catalytic chemical vapor deposition on trenched substrates below 80 °C

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Product

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Effect of Atomic Hydrogen on Preparation of Highly Moisture-Resistive SiN_xFilms at Low Substrate Temperatures

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Production and Detection of H Atoms and Vibrationally Excited H₂ Molecules in CVD Processes

Preparation of Low-Stress SiN_x Films by Catalytic Chemical Vapor Deposition at Low Temperatures