Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Ashok, S.; Kräutle, H.; Beneking, H.

doi:10.1063/1.95247

Cited by 45 publications

(14 citation statements)

References 10 publications

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“…Any mechanism that modifies the properties of the interface such as the introduction of an interfacial layer [1][2][3][4], annealing [5,6], irradiation with gamma rays [7,8], protons [9][10][11][12][13][14] and neutrons [14][15][16], ion implantation, [17][18][19] and high-energy ion beam irradiation [20][21][22][23][24][25][26] are found to alter the characteristics of the barrier. The Schottky barrier height (SBH) forms a very important parameter of the diode as it controls the electrical transport across the barrier.…”

Section: Introductionmentioning

confidence: 96%

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Sharma¹,

Shahnawaz²,

Kumar³

et al. 2007

Applied Surface Science

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Section: Introductionmentioning

confidence: 96%

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Sharma¹,

Shahnawaz²,

Kumar³

et al. 2007

Applied Surface Science

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“…Therefore, the attenuation of sample C was much larger than that of sample B. In addition, Ar-implatation may cause ion damage-induced donors within the Si layer [14]. Therefore, the attenuation of sample C was much larger than that of sample A (Fig.…”

Section: Resultsmentioning

confidence: 95%

Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

Liu

Weng

Lin

2011

IEEE Microw. Wireless Compon. Lett.

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This study improved the thermal processing stability of Si-based coplanar waveguides (CPW) through Ar ion implantation with rapid thermal annealing (RTA). Ar ion implantation damaged the surface layer of the high-resistivity silicon substrate, which decreased attenuation of the CPW line. However, the damaged layer recrystallized during a high temperature process, which caused thermal processing instability. A RTA process was performed to retard the epitaxial regrowth from the substrate, this improved thermal processing stability and decreased dc-voltage dependence of the attenuation of the CPW line. These improved properties were found to be due to the RTA process retaining more bulk traps within the damaged layer.Index Terms-Coplanar waveguide (CPW), microwave loss, surface passivation, thermal processing stability, thermally-induced electrical instability.

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“…Similar result has also been reported in p-Si and n-Si Schottky diodes, in which high density of interface states were generated by Ar ion implantation. 18,19 It has been reported that the interface state density depended on the post annealing process for Si/Si and Si/GaAs junctions fabricated by SAB, which decreased as the annealing temperature increased. 17,20 The interface state density at the bonded Si/Si interface reduced to the smallest value after annealing at 1000 • C. Therefore, the annealing process with high temperature may be required for reducing the interface resistance of the bonded Al/Si junctions.…”

Section: Resultsmentioning

confidence: 99%

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices

Liang

Furuna

Matsubara

et al. 2017

ECS J. Solid State Sci. Technol.

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Si junctions by surface activated bonding (SAB) method and investigated the effects of the annealing process on the electrical properties of the junctions by measuring their current -voltage (I-V) characteristics. It was found that the leakage current of the reverse bias voltage in the bonded Al/n-Si junctions significantly decreased and the interface resistance of the bonded Al/p-Si junctions dramatically decreased with the annealing temperature. The smallest interface resistances of the bonded Al/p + -Si and Al/n + -Si junctions were obtained to be 0.021 and 0.032 • cm 2 , after annealing at 300 and 400 • C, respectively. We demonstrated the fabrication of Al foil mesa-structures and micro wiring with complex structures on Si substrates. The sheet resistance of the bonded micro wiring was found to be more than two orders of magnitude lower than that of the evaporated micro wiring. In addition, Al foil mesa structures revealed a good thermal stability at the annealing temperature lower than 600 • C. These results indicated that the fabrication of the thick metal electrode in devices could be realized by SAB.

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Effect of argon ion implantation dose on silicon Schottky barrier characteristics

Cited by 45 publications

References 10 publications

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Effects of swift heavy ion irradiation on the electrical characteristics of Au/n-GaAs Schottky diodes

Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-Implanted Surface Passivated High-Resistivity Silicon

Aluminum Foil/Si Direct Bonding as Prototypes of Ultra-Thick Metal Contacts in Devices

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