Effect of annealing temperature on properties of RF sputtered Cu(In,Ga)Se2 thin films

Structure and properties of CIGS films based on one-stage RF-sputtering process at low substrate temperature

“…Recently, efforts have been made to fabricate CIGS layers by sputtering. To further reduce the fabrication costs, a one-step sputtering has been developed [7][8][9][10] to deposit CIGS films without selenization. Frantz et al [7] prepared CIGS solar cell with an efficiency of up to 8.9 % through one-step radio frequency (RF) sputtering at T sub of 550°C.…”

Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

“…Zhou et al [2] had studied the effects of substrate temperature, working pressure and sputtering power on the crystallinity, grain size, and microstructure of the CIGS films deposited by one-step RF magnetron sputtering, and found an obvious preferred orientation of (220)/(204) at high sputtering power and high working pressure. By the way, previously almost all the CIGS films prepared by one-step sputtering process were random or (112)-oriented [3][4][5][6][7][8][9][10][11][12][13]. Siebentritt et al [14] and Jiang et al [15] indicated that the preferred orientation of (220)/(204) in CIGS film is beneficial to enhance the property of photovoltaic device.…”

“…There are various fabrication methods for CIGS film, where co-evaporation process is a typical method [1]. In recent years, one-step magnetron sputtering process [2][3][4][5][6][7][8][9][10][11][12][13] is developed and presents a potential application in preparing CIGS film. For the one-step sputtering process, a quaternary CIGS ceramic target is directly employed, which is evidently simple in the preparation process of CIGS film.…”

Influence of Selenization Pressure on Properties of CIGS Absorber Layer Prepared by RF Sputtering

“…The sputtering method has received a great deal of attention owing to its flexibility for mass production, fast deposition rates and stoichiometric transfer of target materials to films on the substrate 2) . Nevertheless, CIGS films prepared by sputtering have been shown to be Se deficient due to Se high vapor pressure 7) . Therefore, selenization is frequently required to obtain accurate stoichiometric CIGS films and high cell efficiencies.…”

“…High efficiency CIGS films have been prepared by selenization in an H2Se gas atmosphere; however, it is nearly impossible to effectively implement this process in industry due to the extreme toxicity of H2Se gas 7) . Currently, the evaporation of Se pellets or powder instead of toxic H2Se gas is being widely researched [8][9][10] .…”