Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

Bai, Tian; Liu, C.Q.; Wang, N.; Liu, S.M.; Wang, H.L.; Jiang, Weiwei; Ding, Wanyu; Fei, W.D.; Chai, Weiping

doi:10.1016/j.jallcom.2015.06.077

Cited by 19 publications

(2 citation statements)

References 31 publications

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“…As for Cu(In,Ga) (S,Se) 2 (CIGS/CIGSe) absorbers, a variation in the selenization stages appear to whether create detrimental effect on the adhesion to the substrate and peel-off issues (single annealing stage) or to strengthen the referential XRD diffraction peak indicating improved crystallinity of CIGS thin film (three sequential stages), whereas the annealing time above the optimal one may form detrimental secondary phases on the absorber surface. Furthermore, a shift in the diffraction peak position was witnessed at extended thermal treatments that could be resulting from the composition variations and/or residual stress in the films [2][3][4][5].…”

Section: Introductionmentioning

confidence: 99%

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Benhaddou

Aazou

Sánchez

et al. 2020

Solar Energy Materials and Solar Cells

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Section: Introductionmentioning

confidence: 99%

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Benhaddou

Aazou

Sánchez

et al. 2020

Solar Energy Materials and Solar Cells

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“…The study of the orientation distribution in the film reflected in the Raman spectra supports the study conducted by Schmid et al on CIS polycrystalline samples. 58 Figure 6B shows the Tauc plot for estimating the energy bandgap. The bandgap values of the samples deposited at 80, 120, and 160 W were 1.21, 1.20, and 1 eV, respectively.…”

Section: Resultsmentioning

confidence: 99%

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

Desarada,

Chavan,

Chaure

et al. 2023

ECS J. Solid State Sci. Technol.

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CuInGaSe2 (CIGS) thin films were deposited by radio-frequency sputtering using a single quaternary target and the effects of various parameters, such as substrate temperature, sputtering power, and gas flow rate, were studied. The structural, morphological, compositional, and optical properties of the films were investigated by X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy, energy-dispersive X-ray, and UV-Vis-NIR spectroscopy. Samples exhibited the chalcopyrite-type tetragonal structure confirmed by XRD analysis. Raman spectroscopy showed the presence of Cu poor OVC phase in all samples.The growth of the sample at a higher substrate temperature resulted in a higher crystalline nature with a suppressed OVC phase and with an energy bandgap of 1.1eV. The deposition of CIGS at 160 W sputtering power favors growth towards (112) Bragg crystal plane, suppressing the (220)/(204) plane of CIGS, shows change in preferred orientation with a lower sputtering power at 80 and 120 W. The sample grown at 60 standard cubic centimeter per minute gas flow rate exhibited compact grain growth with marginally improved crystallinity.The sample grown at 160W, 300°C, and 60SCCM shows better crystalline and morphological properties, and it can be used as an absorber layer for highly efficient CIGS thin-film solar cells.

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One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

Oubaki,

Machkih,

Larhlimi

et al. 2023

Physica Status Solidi (a)

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Using a quaternary compound target, Cu(In,Ga)Se2 films are prepared using one‐step, selenization‐free direct current magneton sputtering (DcMS) and high power impulse magnetron sputtering (HiPIMS) methods. This study investigates how the sputtering power affects the composition, microstructure, morphology, and electrical characteristics of the films. Film crystallinity is found to be affected by the sputtering power utilized. The films deposited at 0.25 kW are amorphous, whereas those formed at 0.5–1 kW display a chalcopyrite structure with a (112)–preferred orientation. With increased sputtering power, the films’ crystal quality improves, displaying a homogeneous and compact morphology free of peeling and cracking. Elemental measurement of the CIGS films reveals that, depending on the deposition method, the film composition deviates from that of the target. The electrical properties of the deposited films vary with increasing sputtering power.

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Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

Cited by 19 publications

References 31 publications

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications

One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

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Effects of sputtering voltage and current on the composition and microstructure of the CIGS films prepared by one-step pulsed DC magnetron sputtering

Cited by 19 publications

References 31 publications

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Investigation on limiting factors affecting Cu2ZnGeSe4 efficiency: Effect of annealing conditions and surface treatment

Optimization of Growth Parameters of the RF-Sputtered CuInGaSe2 Thin Films for Photovoltaic Applications

One‐Step DcMS and HiPIMS Sputtered CIGS Films from a Quaternary Target

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Optimization of Growth Parameters of the RF-Sputtered CuInGaSe₂ Thin Films for Photovoltaic Applications