Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study

Воротилов, К. А.; Yanovskaya, M. I.; Dorokhova, O. A.

doi:10.1080/10584589308216698

Cited by 51 publications

(15 citation statements)

References 11 publications

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“…The coercive field strength in this case increases significantly (almost doubled, as it is seen from Table 1). Similar results were repeatedly obtained by different authors and are usually interpreted in the framework of the damaged layer model, where thin layer at the interface has lower permittivity and no polarization switching [1][2][3]6].…”

Section: Resultssupporting

confidence: 78%

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

et al. 2012

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An effect of the thickness of ferroelectric sol-gel PZT films on the dielectric hysteresis behavior is studied. Ferroelectric Pb(Zr 0.48 Ti 0.52 )О 3 films with the thickness from 95 to 340 nm are studied. It has been found that the decrease in the film thickness leads to a decrease in the residual polarization and the steepness of the hysteresis loops, while the coercive field increases. At the same time the offset of the hysteresis loop along the voltage axis shows no definite dependence on the film thickness. Experimental results have a good correlation with the damage layer model at the PZT/Pt interface.

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Section: Resultssupporting

confidence: 78%

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

et al. 2012

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“…7. 22 Lower E c values from the C-V curves compared to the coercive field measured from the P-E hysteresis loops can be attributed to the difference in measuring frequencies.…”

Section: October 1999mentioning

confidence: 93%

Physical and Dielectric Properties of (1–x)PbZrO₃·xBaTiO₃ Thin Films Prepared by Chemical Solution Deposition

Park

Yoon

Kang

1999

Journal of the American Ceramic Society

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Physical and dielectric properties of (1−x)PbZrO 3 ؒxBaTiO 3 thin films prepared by a chemical coating process have been investigated as a function of BaTiO 3 (x) content (0 ≤ x ≤ 0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1−x)PbZrO 3 -xBaTiO 3 thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO 3 content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO 3 content increased. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A thin film at the low-field antiferroelectricferroelectric phase boundary with x = 0.05 exhibited the highest P sat and P r values. The maximum values of these were 45 and 31 µC/cm 2 , respectively.

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“…The nuclei formed at the film surface or inside have a random orientation and thus inhibit the epitaxial growth of the film. The coefficient of nonlinearity [13] K may be considered as a measure of the non-linear property of the ferroelectric material in the external field: This could be achieved in this research by controlling the heating rate and the custallization temperature.…”

Section: Resultsmentioning

confidence: 99%

Electrical properties of a-axis aligned lanthanum-modified lead titanate thin films prepared using sol-gel process

Yoon

Kim

Lee

et al. 1997

Metals and Materials

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The (100) epitaxial lanthanum-modified lead titanate (PLT) film was fabricated using sol-gel method on platinized MgO substrates. The substrate used was Pt(100)/Ti(100)/MgO where Pt and Ti layers had been sputter-deposited at 600"C. We used the direct furnace insertion method and the crystallization temperature of 700"C in order to fabricate the epitaxial film. The phase of the film was examined using x-ray diffraction (XRD) and the film orientation was examined by pole figure and x-ray rocking curves. The epitaxial PLT thin film had higher dielectric constant and better ferroelectricity and fatigue resistance than the polycrystalline films. However, it shows higher leakage current than the polycrystalline film.

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Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study

Cited by 51 publications

References 11 publications

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

Physical and Dielectric Properties of (1–x)PbZrO₃·xBaTiO₃ Thin Films Prepared by Chemical Solution Deposition

Electrical properties of a-axis aligned lanthanum-modified lead titanate thin films prepared using sol-gel process

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Effect of annealing conditions on alkoxy-derived PZT thin films. Microstructural and CV study

Cited by 51 publications

References 11 publications

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

Effect of Sol-Gel PZT Film Thickness on the Hysteresis Properties

Physical and Dielectric Properties of (1–x)PbZrO3·xBaTiO3 Thin Films Prepared by Chemical Solution Deposition

Electrical properties of a-axis aligned lanthanum-modified lead titanate thin films prepared using sol-gel process

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Product

Resources

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Physical and Dielectric Properties of (1–x)PbZrO₃·xBaTiO₃ Thin Films Prepared by Chemical Solution Deposition