Physical and Dielectric Properties of (1–x)PbZrO₃·xBaTiO₃ Thin Films Prepared by Chemical Solution Deposition

Abstract

Physical and dielectric properties of (1−x)PbZrO 3 ؒxBaTiO 3 thin films prepared by a chemical coating process have been investigated as a function of BaTiO 3 (x) content (0 ≤ x ≤ 0.2). Changing the molar ratio between propylene glycol and water prior to the deposition optimized the chemical precursors. (1−x)PbZrO 3 -xBaTiO 3 thin films that contained a majority of perovskite phase, but also contained large amounts of other phases, were fabricated. These films could withstand fields of 250 kV/cm at 1 kHz. The microstructure of the thin films was found to depend on the BaTiO 3 content. The phase transition from antiferroelectric to ferroelectric was gradually induced as the BaTiO 3 content increased. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A maximum dielectric constant of ∼809 was obtained at the composition of x = 0.1. A thin film at the low-field antiferroelectricferroelectric phase boundary with x = 0.05 exhibited the highest P sat and P r values. The maximum values of these were 45 and 31 µC/cm 2 , respectively.

New Members of SHG Active Dugganite Family, A3BC3D2O14 (A = Ba, Pb; B = Te, Sb; C = Al, Ga, Fe, Zn; D = Si, Ge, P, V): Synthesis, Structure, and Materials Properties

“…It is known that the lone pair of electrons could facilitate use as an additional source of structural distortion and add to the overall dielectric behavior. Similar behavior has also been observed before. , It may be noted that all the compounds exhibit low dielectric loss in our studies, which may be important in ceramic dielectric resonator technology and may be useful in wireless communications. The high values of dielectric constant with reasonably low dielectric loss is a desirable property in a solid for use in important communication technology. , …”