Effect of AlN buffer thickness on stress relaxation in GaN layer on Si (111)

Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (1 1 1)

“…This result is in agreement with our result. This phenomenon (the so-called strong stress effect) was observed in our previous study [7]. By integrating our results, it is considered that a strong stress effect appeared above 100 cm À 1 crack density.…”

“…This is considered that the abovementioned strong stress effect makes helplessly the tradeoff. The behavior of crack density and (0 0 2) FWHM in the case of the 100-nm thickness is similar to that of the sample without the LT-AlN interlayer in our previous result, which does not show a tradeoff [7]. However, there is a big difference in the stress relaxation and crack density between the 100-nm-thick sample and the sample without the LT-AlN interlayer.…”

“…GaN growth and LT-AlN interlayer growth were accomplished at pressures of 200 and 76 Torr and temperatures of 1045 and 720 1C, respectively, by using TMAl, TMGa, and NH 3 as precursors and H 2 as a carrier gas. The AlN buffer layer was grown to a nominal thickness of 35 nm; this thickness was selected on the basis of our previous study such that the growth time is reduced (details of AlN buffer growth are described elsewhere [7]). After growing the AlN buffer layer, the first GaN layers were grown with nominal thicknesses of 100, 200, 400, and 600 nm.…”

The influence of the Al pre-deposition on the properties of AlN buffer layer and GaN layer grown on Si (111) substrate

“…Although GaN-based devices have been produced, the growth mechanism of GaN on Si substrate still needs to be researched. Recently, the Al pre-deposition before growing the AlN buffer layer was mentioned by some teams [14][15][16][17]. Liu et al [18] reported that the substrate was exposed to trimethylaluminum (TMAl) for 10 s in order to prevent the formation of a Si x N y layer.…”

The impact of an intermediate temperature buffer on the growth of GaN on an AlN template by hydride vapor phase epitaxy

“…The root-mean square (RMS) roughness values for the samples were notably different; sample A showed a relatively rough (4.6 nm) surface, but sample B showed a smooth surface (1.0 nm). The lattice defects are known to have a strong relationship with surface morphology and with the strain of the film [20]. Hence, the results shown in Fig.…”