Influence of the thickness of the 1st GaN layer under a low-temperature AlN interlayer on the properties of GaN layer grown on Si (1 1 1)

Performance improvement of GaN-based metal–semiconductor–metal photodiodes grown on Si(111) substrate by thermal cycle annealing process

“…Several methods were used to solve the problems, such as using a high temperature AlN buffer, or inserting a low temperature AlN interlayer or superlattice. [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25] However, the ability of strain control is still not sufficient to solve the crack problem completely. Further techniques should be developed, and Yamaguchi et al's works give a hint.…”

Strain controlled growth of crack-free GaN with low defect density on silicon (1 1 1) substrate

“…After a first development period at the turn of the millennium [1][2][3][4], the growth of gallium nitride (GaN) on silicon (Si) substrate is now drawing more and more attention again [5][6][7][8][9] due to its benefits, e.g. affordable and available large diameter substrates and the possibility of transferring established processes from silicon industries.…”

High quality GaN epilayers grown on Si (111) with thin nonlinearly composition-graded AlxGa1−xN interlayers via metal-organic chemical vapor deposition

“…Different techniques have been used by some groups to obtain thick crack-free and high quality GaN layer successfully. Low-temperature (LT) AlN interlayers for GaN grown on Si were first applied by Krost et al [1,2], and some improvements were made by other groups [5,6]. Some techniques originally used for the growth of III-nitrides on sapphire or SiC substrates, such as AlGaN interlayers [7], AlN/GaNor AlGaN/GaN-based superlattices [8,9], were applied for GaN epitaxy on Si substrates.…”