Effect of Al<sub>2</sub>O<sub>3</sub> Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Hu, Shiben; Ning, Honglong; Lu, Kuankuan; Fang, Zhiqiang; Tao, Ruiqiang; Yao, Rihui; Zou, Jianhua; Xu, Miao; Wang, Lei; Peng, Junbiao

doi:10.1109/jeds.2018.2820003

Cited by 17 publications

(15 citation statements)

References 24 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…It has been shown that the gap state density in oxide semiconductor TFTs can be affected by the ambient moisture and oxygen adsorption on the top channel surface, which can be suppressed by the passivation layer . However, for this effect, the type or fabrication method of the passivation layer seems not to be critical, as improvements in the performance of n- and p-type TFTs have been reported with different ALD and solution-processed oxide films as well as with organic passivation layers. ,− …”

Section: Results and Discussionmentioning

confidence: 99%

“…On the other hand, the shallow traps (tail states near the valence band), are less affected, as the carrier mobility does not increase significantly . Interestingly, it has been reported that passivation of n-type oxide TFTs by ALD Al 2 O 3 increases the mobility and SS which is opposite to what has been observed for the p-type devices.…”

Section: Results and Discussionmentioning

confidence: 99%

“…28 However, for this effect the type or fabrication method of the passivation layer seems not to be critical, as improvements in the performance of n-and p-type TFTs have been reported with different ALD and solution-processed oxide films as well as with organic passivation layers. 22,[29][30][31] To further improve TFT performance, the devices were annealed for 10 mins in 1.5 mbar No passivation V DS = -10 V color changes visible to the naked eye, potentially indicating a partial reduction into metallic Cu. The same effect was observed also when the annealing was performed in 1 atm Ar atmosphere at the same temperature.…”

Section: Tft Performancementioning

confidence: 99%

See 2 more Smart Citations

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Napari

Huq

Meeth

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low 1 hole mobility and high off-state currents. We fabricated p-type TFTs with a phasepure polycrystalline Cu 2 O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al 2 O 3 passivation layer on the Cu 2 O channel, followed by vacuum annealing at 300 • C. Detailed characterisation by TEM-EDX and XPS shows that the surface of Cu 2 O is reduced following Al 2 O 3 deposition and indicates the formation of 1-2 nm thick CuAlO 2 interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al 2 O 3 , leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.

show abstract

Section: Results and Discussionmentioning

confidence: 99%

Section: Results and Discussionmentioning

confidence: 99%

Section: Tft Performancementioning

confidence: 99%

See 1 more Smart Citation

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Napari

Huq

Meeth

et al. 2021

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

show abstract

“…For this reason, those acidic Cu etchants can damage the IGZO layer and device structure easily and affect the device performance. As a result, most researchers use shadow mask to deposit S/D to avoid wet Cu etchant [20,[26][27][28]. TFTs characteristics are usually presumed from the transfer characteristics, where the drain to source current (I d ) is plotted against gate to source voltage (V g ) for various drain to source voltage (V d ) and from output characteristics, where I d is plotted against drain to source voltage (V d ) for various gate to source voltage (V g ), as shown in Figure 4.…”

Section: Resultsmentioning

confidence: 99%

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

et al. 2021

View full text Add to dashboard Cite

The electrical performance of the back-channel etched Indium–Gallium–Zinc–Oxide (IGZO) thin-film transistors (TFTs) with copper (Cu) source and drain (S/D) which are patterned by a selective etchant was investigated. The Cu S/D were fabricated on a molybdenum (Mo) layer to prevent the Cu diffusion to the active layer (IGZO). We deposited the Cu layer using thermal evaporation and performed the selective wet etching of Cu using a non-acidic special etchant without damaging the IGZO active layer. We fabricated the IGZO TFTs and compared the performance in terms of linear and saturation region mobility, threshold voltage and ON current (ION). The IGZO TFTs with Mo/Cu S/D exhibit good electrical properties, as the linear region mobility is 12.3 cm2/V-s, saturation region mobility is 11 cm2/V-s, threshold voltage is 1.2 V and ION is 3.16 × 10−6 A. We patterned all the layers by a photolithography process. Finally, we introduced a SiO2-ESL layer to protect the device from external influence. The results show that the prevention of Cu and the introduced ESL layer enhances the electrical properties of IGZO TFTs.

show abstract

“…Amorphous oxide semiconductor thin-film transistors (TFTs) have attracted interest for use in modern electronics owing to their high electron mobility and stability [1]- [5]. Among them, indium-zinc oxide (IZO) is attracting attention as a promising candidate for next-generation display backplanes owing to its uniformity in large-area thin films, excellent transmittance in the visible region (∼90 %), and relatively high electron mobility (∼10 cm 2 /Vs) compared to commercial amorphous or poly-Si-based semiconductors [6], [7].…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer

Heo

Tarsoly

Lee

et al. 2022

IEEE J. Electron Devices Soc.

View full text Add to dashboard Cite

Solution-processed In-Zn oxide (IZO) semiconductor thin-film transistors (TFTs) were fabricated with passivation layers of either poly(methyl methacrylate) (PMMA) or cyclic transparent optical polymer (CYTOP). According to the transfer curves obtained on the day of fabrication and after 200 days, the drain-source current of the IZO TFT without a passivation layer decreased by approximately 37 %. For the PMMA-passivated IZO TFT, it decreased by approximately 31 %. The current for the CYTOPpassivated IZO TFT showed significantly lower, only 7 % deterioration. Hence, the CYTOP-passivated IZO TFT exhibited improved electrical stability under long term ambient storage. This was attributed to the difference in the chemical composition of the two polymers, as CYTOP is a fluoropolymer, while PMMA is an ester group containing organic polymer. We show, passivation of the active layer with the proper organic film improves the stability of the high-performance solution-processed IZO TFTs.

show abstract

Effect of Al₂O₃ Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Cited by 17 publications

References 24 publications

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer

Contact Info

Product

Resources

About

Effect of Al2O3 Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Cited by 17 publications

References 24 publications

Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

Back-Channel Etched In-Ga-Zn-O Thin-Film Transistor Utilizing Selective Wet-Etching of Copper Source and Drain

Improved Electrical and Temporal Stability of In-Zn Oxide Semiconductor Thin-Film Transistors With Organic Passivation Layer

Contact Info

Product

Resources

About

Effect of Al₂O₃ Passivation Layer and Cu Electrodes on High Mobility of Amorphous IZO TFT

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors