Role of ALD Al2O3 Surface Passivation on the Performance of p-Type Cu2O Thin Film Transistors

Napari, Mari; Huq, Tahmida N.; Meeth, D. Jake; Heikkilä, Mikko; Niang, Kham M.; Wang, Han; Iivonen, Tomi; Wang, Haiyan; Leskelä, Markku; Ritala, Mikko; Flewitt, Andrew J.; Hoye, Robert L. Z.; MacManus‐Driscoll, Judith L.

doi:10.1021/acsami.0c18915

Cited by 35 publications

(29 citation statements)

References 52 publications

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“…To further improve the device performances, ∼5-nm-thick ALD-Al 2 O 3 passivation was performed at 150 °C. ,, The TFT mobility was slightly degraded after the back-channel passivation. However, further reduction of the off current as low as 10 –12 A was observed, which nearly corresponded to the measurement limit in our device testing system.…”

Section: Resultsmentioning

confidence: 99%

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Huang

Tang

Yang

et al. 2021

ACS Appl. Mater. Interfaces

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Atomically thin oxide semiconductors are significantly expected for next-generation cost-effective, energy-efficient electronics. A high-performance p-channel oxide thin-film transistor (TFT) was developed using an atomically thin p-type tin monoxide, SnO channel with a thickness of ∼1 nm, which was grown by a vacuum-free, solvent-free, metal-liquid printing process at low temperatures, as low as 250 °C in an ambient atmosphere. By performing oxygen-vacancy defect termination for the bulkchannel and back-channel surface of the ultrathin SnO channel, the presented p-channel SnO TFT exhibited good device performances with a reasonable TFT mobility of ∼0.47 cm 2 V −1 s −1 , a high on/ off current ratio of ∼10 6 , low off current of <10 −12 A, and a subthreshold swing of ∼2.5 V decade −1 , which was improved compared with the conventional p-channel SnO TFTs. We also fabricated metal-liquid printing-based n-channel oxide TFTs such as n-channel SnO 2 and In 2 O 3 -TFTs and developed ultrathinchannel oxide-TFT-based low-power complementary inverter circuits with the developed p-channel SnO TFTs. The full swing of voltage-transfer characteristics with a voltage gain of ∼10 and a power dissipation of <4 nW for p-SnO/n-SnO 2 and ∼120 and <2 nW for p-SnO/n-In 2 O 3 -CMOS inverters were successfully demonstrated.

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Section: Resultsmentioning

confidence: 99%

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Huang

Tang

Yang

et al. 2021

ACS Appl. Mater. Interfaces

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“…Although it is not easy to design high‐performance p ‐channel oxide TFTs, a few p ‐type oxide candidates are available, such as copper‐based oxides 89–91 and tin‐based oxides 92–95 . Some reports have been published on ALD‐derived p ‐channel oxide TFTs with copper‐ 96–98 and tin‐based oxides 99–102 . The electrical properties of p ‐channel oxide TFTs are affected by the non‐stoichiometry, cation chemical state, and thickness of the p ‐type oxide film.…”

Section: Ald‐derived P‐channel Oxide Tftsmentioning

confidence: 99%

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

2022

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This paper reviews recent developments in the fabrication of high‐performance n‐channel metal‐oxide thin‐film transistors (TFTs) through atomic‐layer deposition (ALD), which are now attracting attention due to their potential for use in augmented and virtual reality, ultra‐high‐definition organic light‐emitting diodes, and flexible electronics. Recent trends in research on TFT backplanes for display applications are provided in the introduction. In the main section, ALD‐derived n‐type oxides serving as active layers are classified into binary, ternary, and quaternary systems, and recent developments and critical issues in n‐channel oxide TFTs are described. The performance of n‐channel oxide TFTs can be boosted through advanced architectures, including stacked heterojunction channels using two‐dimensional electron gases, and the introduction of high‐k dielectric such as ALD‐derived hafnium oxide, which is highlighted in this review. Finally, progress in p‐channel ALD‐derived oxide TFTs is briefly addressed with respect to complementary metal–oxide‐semiconductor applications.

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“…Napari et al investigated the role of a thin ALD‐grown Al 2 O 3 passivation layer on the electrical characteristics of Cu 2 O TFTs. [ 33 ] The p‐type Cu 2 O thin‐film was fabricated by thermal ALD at 200 °C using copper (II) acetate and water vapor. The formation of an Al 2 O 3 passivation layer and subsequent annealing at 300 °C improved the electrical characteristics of Cu 2 O TFTs, which exhibited a μ FE of 1.5 × 10 −3 cm 2 V −1 s −1 , an I ON/OFF of 5 × 10 3 , a V TH of −19.8 V, and a SS of 11.5 V dec −1 (Figure 3g).…”

Section: Progress Of P‐channel Oxide Thin‐film Transistorsmentioning

confidence: 99%

“…h) Transmission electron microscopy (TEM) of and corresponding electron dispersive spectroscopy image at the sample interface. g,h) Reproduced with permission [33]. Copyright 2021, American Chemical Society.…”

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confidence: 99%

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

Kim

Jeong

2021

Physica Rapid Research Ltrs

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Oxide semiconductors are considered as one of the most promising candidates for back‐end‐of‐line transistors for monolithic 3D integration due to various advantages, such as complementary metal–oxide–semiconductor (CMOS)‐compatible method, low fabrication temperature, and promising electrical characteristics. As such, the demand for p‐type oxide semiconductors that are comparable to their n‐type oxide counterparts is increasing. However, the inferior electrical characteristics of p‐channel field‐effect transistors based on oxide semiconductors hinder their widespread application. Thus, the development of high‐performance p‐type oxide semiconductors is essential for their implementation in next‐generation electronics, which have requirements such as innovative form factors, high power efficiencies, and superior transparency. Herein, strategies for improving the device performances of p‐type oxide semiconductors fabricated via CMOS‐compatible methods are reviewed from a material science and device physics perspective, and a brief history of p‐type oxide semiconductors is discussed. Furthermore, critical issues for p‐type oxide semiconductors, such as the transport mechanism, bias stress stability, high off‐current, and ambipolar behavior, are discussed.

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Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Cited by 35 publications

References 52 publications

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Atomically Thin Tin Monoxide-Based p-Channel Thin-Film Transistor and a Low-Power Complementary Inverter

Recent progress and perspectives on atomic‐layer‐deposited semiconducting oxides for transistor applications

Recent Progress and Perspectives of Field‐Effect Transistors Based on p‐Type Oxide Semiconductors

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