Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor

Kim, Jin‐Young; Seo, Jungho; Lim, Hyun-Woo; Chang-Hyun, Ban; Kim, Kyu-Chae; Park, Jin-Goo; Jeon, Seok-Gy; Kim, Bonghoe; Jin, Seung-Oh; Hu, Young

doi:10.1093/ietele/e91-c.5.703

Cited by 10 publications

(3 citation statements)

References 4 publications

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“…Notably, in Figure S1 L is the distance between the HI and the LO and L s > L is an alternative pathway for the charge carriers to travel without the GR. This approach has successfully been applied in X-/γ-ray detectors based on, for example, CdTe, , CdZnTe, , Si, − and SiC . More recently, Wei et al showed that using GR reduces the crystal surface leakage current and device dark current in CH 3 NH 3 PbBr 3– x Cl x -based γ-ray detectors.…”

mentioning

confidence: 99%

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals

Almora

Matt

These

et al. 2022

J. Phys. Chem. Lett.

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CsPbBr 3 single crystals have potential for application in ionizing-radiation detection devices due to their optimal optoelectronic properties. Yet, their mixed ionic–electronic conductivity produces instability and hysteretic artifacts hindering the long-term device operation. Herein, we report an electrical characterization of CsPbBr 3 single crystals operating up to the time scale of hours. Our fast time-of-flight measurements reveal bulk mobilities of 13–26 cm 2 V –1 s –1 with a negative voltage bias dependency. By means of a guard ring (GR) configuration, we separate bulk and surface mobilities showing significant qualitative and quantitative transport differences. Our experiments of current transients and impedance spectroscopy indicate the formation of several regimes of space-charge-limited current (SCLC) associated with mechanisms similar to the Poole–Frenkel ionized-trap-assisted transport. We show that the ionic-SCLC seems to be an operational mode in this lead halide perovskite, despite the fact that experiments can be designed where the contribution of mobile ions to transport is negligible.

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mentioning

confidence: 99%

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals

Almora

Matt

These

et al. 2022

J. Phys. Chem. Lett.

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“…Their leakage currents come through guard rings under a reverse bias with the guard rings. So the reduction of I INTER and I SURF results in the decrease in the total leakage current [13].…”

Section: Introductionmentioning

confidence: 99%

A novel design of a silicon PIN diode for increasing the breakdown voltage

Rezaei

Nayeri

Rezaeian

2022

IET Circuits, Devices & Syst

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This paper presents a new structure consisting of a silicon PIN junction with high breakdown voltage and low dark current with two Guard rings. To achieve the optimal structure, the effect of the parameters on the breakdown voltage and the dark current of the device has been investigated and simulated. The intrinsic thickness and impurity, the penetration depth of the active area and guard rings, location and number of guard rings, thickness, and distance between guard rings are the effective parameters of the device's breakdown voltage and dark current. In the proposed structure by placing two guard rings around the active area, the results show that an electric field is distributed at the edge of the active area between the guard rings, which leads to an increase of 292.62 V in breakdown voltage compared to the device without a guard ring.

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“…In recent work, photodiodes structures with virtual guard rings have been studied to eliminate edge breakdown voltage and boost fill factor. One silicon PIN photodiode published with guard rings which has low dark current compared to PIN photodiode without guard ring (2,3). In other work, Intrinsic region effects on photodiode performance were investigated by using Silvaco TCAD simulation.…”

Section: Introductionmentioning

confidence: 99%

Silicon Based P-I-N Photodiode Design With Using Tcad Simulation

Doğanci¹,

Kahraman²,

Erol³

et al. 2022

RAP Conference Proceedings

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The Silicon PIN photodiode (Si-PIN PD) with active area (10.0 x 10.0 mm 2 , 12.0 x12.0 mm 2 and 20.0 x 20.0 mm 2 ) was designed by using Silvaco ATLAS and ATHENA tools at Nuclear Radiation Detectors Applications and Research Center (NÜRDAM). To get Si-PIN PDs' specifications, capacitance-voltage (C-V) and dark current -voltage (I-V), spectral response measurements were accomplished with Bipolar and Shr model, and Newton method. The dark current and capacitance at -90 V of designed Si-PIN PD are (7.49 nA, 39 pF), (39 nA, 51 pF), (10 nA, 80 pF) for 10x10 mm 2 , 12x12 mm 2 , 20x20 mm 2 respectively. Si-PIN PDs have low dark current and capacitance at high reverse voltage and all photodiodes reach the full depletion mode at -20 V. Spectral response of each Si-PIN PD is 0.6 AW -1 . According to obtained results, designed Si-PIN PDs are likely to be used for medical application after fabrication and radiation test.

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Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor

Cited by 10 publications

References 4 publications

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals

A novel design of a silicon PIN diode for increasing the breakdown voltage

Silicon Based P-I-N Photodiode Design With Using Tcad Simulation

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Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor

Cited by 10 publications

References 4 publications

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr3 Single Crystals

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr3 Single Crystals

A novel design of a silicon PIN diode for increasing the breakdown voltage

Silicon Based P-I-N Photodiode Design With Using Tcad Simulation

Contact Info

Product

Resources

About

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals

Surface versus Bulk Currents and Ionic Space-Charge Effects in CsPbBr₃ Single Crystals