Effect of a constant magnetic field on dislocation anharmonicity in silicon

Скворцов, А. А.; Karizin, A. V.; Volkova, L. V.; Koryachko, M. V.

doi:10.1134/s1063783415050273

Cited by 8 publications

(4 citation statements)

References 20 publications

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“…where s T -Soret coefficient [6]. In addition to poor adhesion of the film to the substrate, the thermoelectric properties are affected by the volume defects of the structure.…”

Section: Resultsmentioning

confidence: 99%

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Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

Скворцов¹,

Skvortsov²

2017

Int. J. of Pure and Appl. Math.

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Abstract:The article introduces the analysis of thermal degradation mechanisms related to the heating and melting of metallization system, as well as the contact fusion in transient conditions, and carries out an investigation of the thermal damage of metallization systems under the influence of current pulses. The method of pulse impact on the structure of the metal-semiconductor. The results showed that both thickness and thermal conductivity of the underlayer strongly influence the dynamics of heating of the multilayer system. The results obtained during the experiments show that the various heat-conducting properties of the SiO2 and Si3N4 films are clearly reflected in the connection oscillograms. As a result of defects, a local reduction of the film cross-section leads to an increase in current density, temperature, and consequently, appearance of a local molten area. Electron microscopy confirmed the presence of contact melting at the interface Al-Si. Phase analysis conducted in the border region has shown that the amount of Si impurities in the eutectic makes about 63%. The occurrence of the interface temperature gradients leads to stress, which contributes to the formation of structural defects near the source of thermal shock. The resulting temperature gradient causes the thermoelastic critical condition that could lead to a violation of the adhesion of the metal film, the formation of structural defects and failure of the test compound. The experimental results of thermal degradation of metallization systems, as well as the calculation of physical indicators are described.

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“…where s T -Soret coefficient [6]. In addition to poor adhesion of the film to the substrate, the thermoelectric properties are affected by the volume defects of the structure.…”

Section: Resultsmentioning

confidence: 99%

“…Analyzing the contact pairs with regard to new composition and geometry, one needs to pay attention primarily to the plot λ (∆t 1 ) on a pilot U -shaped curve of reliability [6], which represents the dependence of λ bounce from the time of operation of metallization t.…”

Section: Methodsmentioning

confidence: 99%

Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

Скворцов¹,

Skvortsov²

2017

Int. J. of Pure and Appl. Math.

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“…Сьогодні відносно невеликою є кількість досліджень магнітозалежних явищ у кристалах кремнію у порівнянні із іншими слабомагнітними матеріалами, крім того більшість статей присвячені впливу пластичних деформацій на кремній n-типу провідності [12]. Тому актуальними залишаються дослідження по вивченні слабких пружних деформацій та магнітного поля на властивості кристалів p-Si [13,14]. Після дії магнітного поля, положення та величина характерного максимуму на кривих R/R0 = f(σ) залежить від часу, що пройшов від попереднього циклу деформації (рис.…”

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FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF P-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

Pavlyk¹,

Lys²,

Shykorjak³

et al. 2022

ELIT

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“…was considered in(Alshits et al, 2003;Morgunov, 2004;Skvortsov et al, 2015;Li et al, 2014). There are also a lot of works connected with magnetically stimulated processes in the crystallization of aluminum alloys(Ran et al, 2005;, as well as the influence of permanent magnetic fields on the mechanical properties of other metals(Morgunov, 2004; Alshits et al, 1994;.…”

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confidence: 99%

Deformations of Aluminum Alloys Under the Influence of an Additional Load

Скворцов¹,

Pshonkin²,

Yanov³

2018

PTQ

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Under the influence of a constant magnetic processes in the future lead to destruction. Therefore, the authors investigated these processes in more detail. When studying the creep of the samples, a lever temperature) simultaneously with the application of the load (carried out by steps), an elongation of the sample was recorded with a micrometer (division price 10 load during the measurement, as well as smoo it is found that creeping increases under stable magnetic field; the main features appear at the first creep stage. Thus, preliminary exposure of samples in a constant magnetic field (with induc room temperature) leads to an increase in the absolute deformation of the aluminum alloy to 35%. The material deformation constants are also determined under " constant at the first stage of creep was found to be more than 6 times. Investigation of these processes will help to predict time dependence of creep strain and its rate as well as durability and plasticity at destruction.

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Effect of a constant magnetic field on dislocation anharmonicity in silicon

Cited by 8 publications

References 20 publications

Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

Destruction of Metallization Systems on Silicon From Overheating to Melt Migration

FEATURES OF MECHANICALLY STIMULATED CHANGES IN THE ELECTRICAL CONDUCTIVITY OF P-Si CRYSTALS AFTER THE ACTION OF A MAGNETIC FIELD

Deformations of Aluminum Alloys Under the Influence of an Additional Load

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