Effect of 60Co irradiation and Fowler-Nordheim injection on MOS capacitors with thin plasma nitrided gate oxides

Al2O3 tunnel barrier as a good candidate for spin injection into silicon

“…Moreover, the G-x method allows to determine the type of defects via the extraction of their capture cross section [11]. For NiFe/SiO 2 /Si sample we recognize P b centres (dangling bounds) for n-and p-doped silicon (r s $ 10 À15 cm À2 ) [14]. In contrast, the Al 2 O 3 /Si interface shows another type of defects attributed to Coulomb repulsive centres (r s $ 10 À18 cm À2 ).…”