This work focuses on electrical characterization of NiFe∕SiO2∕Si tunnel diodes that can be used for spin injection into silicon in future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si∕SiO2 interfacial state density compared to similar Al∕SiO2∕Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO2 layer. Consistently the current-voltage experimental characteristics have been modeled by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.
This work focuses on electrical characterisation of NiFe/SiO 2 /Si diodes that can be used as spin injection into silicon for future spintronic devices. Capacitance-voltage characteristics show a large increase of the Si/SiO 2 interfacial state density compared to Al/SiO 2 /Si diodes. This result suggests that nickel and/or iron may have diffused across the SiO 2 layer. Consistently the current-voltage experimental characteristics can be accounted for by using trap assisted electron transport mechanism. These traps may be attributed to ferromagnet atoms in the oxide bulk.
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