Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Benabderrahmane, Rabia; Kanoun, Mehdi; Bruyant, Nicolas; Baraduc, C.; Bsiesy, A.; Achard, H.

doi:10.1016/j.sse.2010.01.018

Cited by 4 publications

(2 citation statements)

References 18 publications

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“…The three issues described above (impedance mismatch, Schottky barrier formation and contact resistance, and nontunneling transport) illustrate that engineering of the energy band profile of magnetic tunnel contacts to silicon is indispensable. Numerous studies on contact properties have indeed been made [94][95][96][97][98][99][100][101][102][103][104]. Different interface engineering approaches have been developed to obtain low-resistance contacts and transport dominated by tunneling (figure 13).…”

Section: Contact Engineering Methodsmentioning

confidence: 99%

Silicon spintronics with ferromagnetic tunnel devices

Jansen

Dash

Sharma

et al. 2012

Semicond. Sci. Technol.

140

158

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In silicon spintronics, the unique qualities of ferromagnetic materials are combined with those of silicon, aiming at creating an alternative, energy-efficient information technology in which digital data are represented by the orientation of the electron spin. Here we review the cornerstones of silicon spintronics, namely the creation, detection and manipulation of spin polarization in silicon. Ferromagnetic tunnel contacts are the key elements and provide a robust and viable approach to induce and probe spins in silicon, at room temperature. We describe the basic physics of spin tunneling into silicon, the spin-transport devices, the materials aspects and engineering of the magnetic tunnel contacts, and discuss important quantities such as the magnitude of the spin accumulation and the spin lifetime in the silicon. We highlight key experimental achievements and recent progress in the development of a spin-based information technology.

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Section: Contact Engineering Methodsmentioning

confidence: 99%

Silicon spintronics with ferromagnetic tunnel devices

Jansen

Dash

Sharma

et al. 2012

Semicond. Sci. Technol.

140

158

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“…Al 2 O 3 is an insulating material with a bandgap of about 8.8 eV at room temperature, and a disruptive field strength of 5–10 MV cm −1 , which makes it interesting for tunnel barrier layers in complementary metal‐oxide‐semiconductor structures (CMOS), magnetic tunnel junctions (MTJ) and single‐electron memory devices, and metal‐insulator‐metal (MIM) tunnel diodes for high‐speed applications . Tunnel barrier applications require ultrathin Al 2 O 3 films with a low defect concentration to enable direct tunneling of electrons through the MIM structure.…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

Zhang

Aslam

Reiners

et al. 2014

Chemical Vapor Deposition

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The resistive switching (RS) properties of a thin Al2O3 layer and TiOx/Al2O3 bilayers integrated into TiN/metal oxide/Pt crossbar devices are investigated for future memristive device (ReRAM) applications. The oxide bilayer stack is realized in consecutive atomic layer deposition (ALD) processes at 300 °C without any post‐annealing step. Stoichiometric Al2O3 and oxygen‐deficient TiOx thin films are grown from dimethylaluminum isopropoxide [DMAI: (CH3)2AlOCH(CH3)2] and tetrakis‐dimethlyamido‐titanium [TDMAT: Ti(N(CH3)2)4], respectively, as the metal sources, and water as the oxygen source. High insulating characteristics are confirmed for as‐grown amorphous Al2O3 films with a dielectric permittivity of 8.0 and disruptive field strength of about 7 MV cm−1, whereas the oxygen‐deficient TiOx shows semiconducting behavior. The bipolar‐type RS characteristics of TiN/TiOx/Al2O3/Pt cells show a strong dependence on both oxide layer thicknesses. A stable OFF/ON state resistance ratio of about 105 is obtained for the bilayer structure of 5 nm TiOx and 3.7 nm Al2O3.

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Silicon spintronics

Jansen¹

2012

Nature Mater

451

322

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Worldwide efforts are underway to integrate semiconductors and magnetic materials, aiming to create a revolutionary and energy-efficient information technology in which digital data are encoded in the spin of electrons. Implementing spin functionality in silicon, the mainstream semiconductor, is vital to establish a spin-based electronics with potential to change information technology beyond imagination. Can silicon spintronics live up to the expectation? Remarkable advances in the creation and control of spin polarization in silicon suggest so. Here, I review the key developments and achievements, and describe the building blocks of silicon spintronics. Unexpected and puzzling results are discussed, and open issues and challenges identified. More surprises lie ahead as silicon spintronics comes of age.

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Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Cited by 4 publications

References 18 publications

Silicon spintronics with ferromagnetic tunnel devices

Silicon spintronics with ferromagnetic tunnel devices

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications

Silicon spintronics

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Al2O3 tunnel barrier as a good candidate for spin injection into silicon

Cited by 4 publications

References 18 publications

Silicon spintronics with ferromagnetic tunnel devices

Silicon spintronics with ferromagnetic tunnel devices

Atomic Layer Deposition of TiOx/Al2O3 Bilayer Structures for Resistive Switching Memory Applications

Silicon spintronics

Contact Info

Product

Resources

About

Atomic Layer Deposition of TiO_x/Al₂O₃ Bilayer Structures for Resistive Switching Memory Applications