E-Mode <i>p-n</i> Junction/AlGaN/GaN (PNJ) HEMTs

Wang, Chengcai; Hua, Mengyuan; Chen, Junting; Yang, Song; Zheng, Zheyang; Wei, Jin; Zhang, Li; Chen, Kevin J.

doi:10.1109/led.2020.2977143

Cited by 56 publications

(31 citation statements)

References 25 publications

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“…The device shows a good thermal stability with the VTH shifting less than 0.4 V up to 175 °C (Figure 5b). RON increases by about 3.3 times, due to stronger phonon scattering at higher temperature [11]. To investigate the thermal stability of LRSiC-HEMT, transfer characteristics were measured from room temperature (25 • C) to 175 • C with a 50 • C step (Figure 5a).…”

Section: Resultsmentioning

confidence: 99%

“…The device shows a good thermal stability with the VTH shifting less than 0.4 V up to 175 °C (Figure 5b). RON increases by about 3.3 times, due to stronger phonon scattering at higher temperature [11]. To analyze the trapping/detrapping effect, the pulsed I-V characteristic and the dynamic R on ratio of LRSiC-HEMT were measured using a pulse width of 2 µs and a period of 200 µs.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

et al. 2021

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Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, a SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on a low-resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on the SiC substrate possess several advantages, including electrical characteristics and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of the low-resistivity SiC substrate is three times lower than the ordinary SiC substrate.

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Section: Resultsmentioning

confidence: 99%

“…The device shows a good thermal stability with the VTH shifting less than 0.4 V up to 175 °C (Figure 5b). RON increases by about 3.3 times, due to stronger phonon scattering at higher temperature [11]. To analyze the trapping/detrapping effect, the pulsed I-V characteristic and the dynamic R on ratio of LRSiC-HEMT were measured using a pulse width of 2 µs and a period of 200 µs.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

et al. 2021

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“…where θ 1 ¼ ln (10), N a is the hole concentration of p-type oxide, and Δt is the increase in the depletion layer width at a positive gate voltage (V G ) compared to when V G ¼ 0. As the voltage drop across the falling edge is equal to E A , t 0 can be extracted from 1 shows the parameters of calculating the V th , and the theoretical results are basically in good agreement with the experimental results.…”

Section: Resultsmentioning

confidence: 99%

“…[1][2][3][4][5][6] Enhancement-mode (E-mode) HEMTs are very important for the switch power supply which need to keep the device closed at zero-gate bias. [7,8] To realize E-mode HEMTs, some techniques have been implemented, such as recessed-gate, [7] fluorine plasma treatment, [9] p-type gate, [10] thin AlGaN barrier. [11] and nanochannel.…”

Section: Introductionmentioning

confidence: 99%

Threshold Voltage Modulation Engineering Using p‐Type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Zhao

Wang

Zheng

et al. 2021

Physica Status Solidi (a)

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This work presents the threshold voltage modulation of the thin-barrier Al 0.45 Ga 0.55 N/GaN Fin-metal oxide semiconductor-high electron mobility transistors (MOS-HEMTs) with two types of p-type metal oxide (CuO and NiO) and one type of HfO 2 gate dielectrics. Different p-type oxides and different fin structures can modulate the threshold voltage of the devices. The CuO and NiO Fin-MOS-HEMT with 60 nm fin width (W fin ) achieves the V th value of 0.3 and 0.6 V, respectively. Compared with the conventional HEMT, the V th of NiO Fin-MOS-HEMT can be positively shifted by 2.5 V, validating the stronger 2D electron gas (2DEG) depletion by the p-type oxide and the V th will shift forward with the decrease of W fin . Furthermore, the theoretical calculation model of Fin-MOS-HEMT threshold voltage is proposed, which is in good agreement with the experimental results. The proposed model can provide important guidelines for the AlGaN/GaN Fin-MOS-HEMTs development.

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Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Wang

Tyagi

et al. 2023

Advanced Materials

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Gate controllability is a key factor that determines the performance of GaN high electron mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct chemical interaction between metal and GaN can result in fixed charges and traps, which can significantly deteriorate the gate controllability. In this study, Ti3C2Tx MXene films are integrated into GaN HEMTs as the gate contact, wherein van der Waals heterojunctions are formed between MXene films and GaN without direct chemical bonding. The GaN HEMTs with enhanced gate controllability exhibit an extremely low off‐state current (IOFF) of 10−7 mA mm−1, a record high ION/IOFF current ratio of ≈1013 (which is six orders of magnitude higher than conventional Ni/Au contact), a high off‐state drain breakdown voltage of 1085 V, and a near‐ideal subthreshold swing of 61 mV dec−1. This work shows the great potential of MXene films as gate electrodes in wide‐bandgap semiconductor devices.

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E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

Cited by 56 publications

References 25 publications

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Threshold Voltage Modulation Engineering Using p‐Type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

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E-Mode p-n Junction/AlGaN/GaN (PNJ) HEMTs

Cited by 56 publications

References 25 publications

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate

Threshold Voltage Modulation Engineering Using p‐Type CuO and NiO for the AlGaN/GaN Enhancement‐Mode Fin‐MOS‐HEMTs on the Si Substrates

Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors

Contact Info

Product

Resources

About

Ti₃C₂T_x MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors