(1 of 9)combined with inherent mechanical flexi bility. [1] Accordingly, extensive research efforts are invested in the development of protocols suitable for flexible device fabrication, rolltoroll processing, and printing, [2] and the design and synthesis of high performance materials, specifi cally high mobility semiconductors, [3] gate insulators, [4] and printable conductors. [5] Importantly, because charge injection, extraction, and accumulation occur at the interfaces of different materials, new solution processing methodologies that control the structure and composition of interfaces in OFETs are also essential for high performances. [6] One seminal inter facial electronic process that limits OFET performances is inefficient charge car rier injection from the source electrode to the organic semiconducting channel. Efficient injection into the organic semiconductor requires Ohmic con tacts, i.e., barrierless energy level align ment at the organic/metal interface. [6a,7] The Schottky barriers, and associated contact resistance, can be reduced by aligning either the highest occupied molecular orbital (HOMO) of a ptype organic semicon ductor or the lowest unoccupied molecular orbital (LUMO) of an ntype organic semiconductor, with the work function of the metal electrode. Therefore, tuning the work function of the metal electrode is a practical approach for optimizing charge injection/extraction and hence device performance. [8] A wellestablished strategy to tune the effective work function (EWF) at the organic/metal interface is by introducing ultrathin organic or inorganic interlayers between the metal contact and the organic semiconductor. [9] In case of organic interlayer, polar molecules are placed at the semiconductor/metal interface and modify the EWF by imposing a dipole at the interface. The energy level alignment can be controllably tuned through the chemical composition of the molecule and the direction and magnitude of the dipole. [7,10] The most common techniques of depositing organic interlayers onto substrates are thermal deposition [11] and spin coating from orthogonal solvents. [12] Another wellknown technique is to deposit selfassembled monolayers (SAM) by immersing the substrate with metal electrodes in the SAM solution prior to the semiconductor
Contact resistance significantly limits the performance of organic field-effect transistors (OFETs). Positioning interlayers at the metal/organic interface can tune the effective work-function and reduce contact resistance. Myriad techniques offer interlayer processing onto the metal pads in bottom-contactOFETs. However, most methods are not suitable for deposition on organic films and incompatible with top-contact OFET architectures. Here, a simple and versatile methodology is demonstrated for interlayer processing in both p-and n-type devices that is also suitable for top-contact OFETs. In this approach, judiciously selected interlayer molecules are co-deposited as additives in the semiconducting polymer active layer. During top contact dep...