Dynamically Tracking the Strain Across the Metal–Insulator Transition in VO₂ Measured Using Electromechanical Resonators

Abstract

We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase in resistance. The resonant frequency increases by ~7 MHz with the growth of metallic domain (M2-R transition) due to the development of tensile strain in the nanobeam. Our approach to dynamically track strain coupled with simultaneous resistance and resonance measurements using electromechanical resonators enables the study of lattice-involved interactions more precisely than static strain measurements. This technique can be extended to other phase change systems important for device applications.

Low-Cost and Facile Synthesis of the Vanadium Oxides V2O3, VO2, and V2O5and Their Magnetic, Thermochromic and Electrochromic Properties

“…Interestingly, from these considerations, the surface / volume ratio is higher for the smaller crystallites leading to an effective moment slightly higher for the 500 °C-annealed compounds than for the 1000 °C-annealed sample. Hence, in good agreement with previous results shown in literature 42 , it can be suggested that the magnetization data shown of V2O3 powder represent the sum of the contributions both from the surface and the core spins. By contrast, below the transition temperature, the interior of the nanoparticle is antiferromagnetic, while the spins on the surface are either free or paramagnetic.…”

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

“…Recently, a research group measured electrical conduction of single crystal VO 2 microbeams across the MIT at various strain and temperatures, and observed a universal resistivity for the insulating phase near the MIT 29 . To date, however, as compared with previous reports 1 4 19 28 30 31 32 33 34 35 36 , the conduction mechanisms of the MIT in VO 2 nanobeams have not been clarified when both thermal heating and electric field are applied to a single VO 2 nanobeam with different strength of substrate attachment.…”

Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires

“…For instance, the strain associated with grain boundary, dislocation, stoichiometry fluctuation and substrate clamping can broaden the phase transition temperature window3. Single-crystal nanowires offer an appealing alternative to thin films because they host single domains across their entire width, and thus support single or few domain MIT5678. Based on this unique single domain MIT characteristic of VO 2 NWs, different aspects of the physics of MIT were discovered91011, and a variety of applications in actuators58, gas sensors12, power meters6, and strain gauges13 were demonstrated.…”