Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

Abstract

Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

Role of annealing temperature on the sol–gel synthesis of VO2 nanowires with in situ characterization of their metal–insulator transition

“…5c), revealing that the Joule heating that leads to a local temperature increase may be the primary mechanism driving the IMT in the VO 2 nanowire device. 39,40…”

Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering

“…It is suggested that the appearance of the M2 phase in the course of SPT of VO 2 films strongly depends on aspects like crystalline orientation and grain size because they dominate the combined effect of stress on a particular c R -axis direction. 42 We elucidate that in a highly strained (020)-oriented VO 2 film, the appearance of the M2 phase over a wide temperature range is highly unlikely due to the small grain sizes in which the stress effect is relaxed by the grain boundaries. We also show the evolution of the Raman peak intensity of each phase for both (011) and (020)-grains of S3 in Fig.…”

“…We adopted the well-known relationship of σ // = −Eε z /2ν, where ν is Poisson's ratio, for deriving the in-plane stress. By using the reported values of Ε and ν of 140 GPa and 0.30, 42,43 a tensile stress of 860 MPa was obtained for the (011)-oriented grains. On the other hand, the peak position of (011) in S3 was almost in accordance with that of the bulk VO 2 , suggesting that the stress on the (011)-oriented grains was relaxed in this sample through the increase of film thickness.…”

VO 2 Substrate Effect on the Thermal Rectification of a Far-Field Radiative Diode

“…One can see that the critical temperature (T c ), hysteresis width ( H ) and slope of the heating curve (β) are different for the three VO 2 films and their values are summarized in Table II. This is reasonable, as these parameters are typically determined by the substrate [40,[47][48][49] and the film thickness [40,[48][49][50].…”