Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires

Cheng, Chun; Guo, Hua; Amini, Abbas; Liu, Kai; Fu, Deyi; Zou, Jian; Song, Haisheng

doi:10.1038/srep05456

Cited by 51 publications

(52 citation statements)

References 26 publications

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“…Fabrications : Poly‐crystalline VO 2 thin films and single‐crystal VO 2 microplates were prepared by pulsed laser deposition (PLD) and physical vapor deposition (PVD), respectively, on Si substrates with thermal SiO 2 (SiO 2 /Si). The details of syntheses were described in our previous work . Monolayer MoS 2 samples were synthesized by chemical‐vapor deposition (CVD) on SiO 2 /Si substrates using MoO 3 and S powders as precursors, which was also described in our previous work .…”

Section: Methodsmentioning

confidence: 99%

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Hou

Wang

et al. 2016

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The atomic thickness and flatness allow properties of 2D semiconductors to be modulated with influence from the substrate. Reversible modulation of these properties requires an "active," reconfigurable substrate, i.e., a substrate with switchable functionalities that interacts strongly with the 2D overlayer. In this work, the photoluminescence (PL) of monolayer molybdenum disulfide (MoS2 ) is modulated by interfacing it with a phase transition material, vanadium dioxide (VO2 ). The MoS2 PL intensity is enhanced by a factor of up to three when the underlying VO2 undergoes the thermally driven phase transition from the insulating to metallic phase. A nonvolatile, reversible way to rewrite the PL pattern is also demonstrated. The enhancement effect is attributed to constructive optical interference when the VO2 turns metallic. This modulation method requires no chemical or mechanical processes, potentially finding applications in new switches and sensors.

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Section: Methodsmentioning

confidence: 99%

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Hou

Wang

et al. 2016

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“…However, thus far, the reported horizontally grown NWs provide a limited array of electrical and optical properties. In particular, with respect to their optical properties, ZnO, GaN, SnO 2 , In 2 O 3 , Sn‐doped In 2 O 3 (ITO), Mg 2 SiO 4 , and TiO 2 all have bandgap energies above the visible (VIS) range while the bandgap energies of Si, GaAs NWs, InAs, and VO 2 are below it . Therefore, the bandgap energy repertoire of horizontally aligned NWs so far lacks the pivotal VIS range.…”

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confidence: 99%

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High‐Performance Blue–UV Photodetectors

et al. 2015

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In order to unleash the potential of the guided growth approach and to explore its principles and generality, it must be extended to new and interesting materials with a wider range of electrical, structural, and optical properties. Zinc selenide (ZnSe) is an important direct bandgap semiconductor with a wide 2.7 eV bandgap and a large 20 meV exciton binding energy. [ 26,27 ] It is interesting from the crystal structure standpoint due to reports of both zinc-blend (ZB) and wurtzite (WZ) NWs, and as an optoelectronic material, since it has a bandgap energy in the VIS range. [ 28,29 ] This chalcogenide holds promise for the fabrication of blue LEDs and lasers, and for diverse applications such as optical switching, photodetection, and second-harmonic generation (SHG) applications. [30][31][32][33] Here we report the guided growth of horizontal and aligned ZnSe NWs with controlled orientations on six different fl at and faceted planes of sapphire (α-Al 2 O 3 ). The concepts and realization of the guide growth are presented in Figure 1 B. Three general growth modes that dictate the reproducible alignment of the NWs were realized: a) epitaxial guided growth along specifi c lattice directions on fl at surfaces, and graphoepitaxial guided growth on nanofaceted surfaces along: b) nanosteps, and c) nanogrooves.The guided ZnSe NWs were fi rst examined with respect to their elemental composition, crystallographic orientation and growth directions. Surprisingly, some new behaviors of guided NWs were found: i) temperature-dependent directional growth of epitaxial NWs was encountered, where some growth directions were observed only at elevated temperatures while others were observed throughout the entire guided growth temperature regime; ii) crystal structure variations were observed where guided NWs on some sapphire planes presented exclusively one crystal phase, either WZ or ZB, while on other planes both ZB and WZ NWs could grow side by side.In order to examine the optoelectronic properties of the ZnSe guided NWs, we exploited the advantages of the guided growth approach and fabricated multiple photodetectors using only parallel fabrication steps. The ZnSe-based photodetectors have the lowest dark currents (below our detection limit 10 −15 A) and the best measured rise and decay times (74 ms and 0.2 s, respectively) for devices that are based on ZnSe 1D nanostructures (see Table S1, Supporting Information, for previous results). [ 31,32,[34][35][36] These results along with the simple and parallel fabrication process and the ability to control the number of NWs in a single device and thus adjust its performance, reveal the advantages of guided ZnSe NWs as building blocks for fast blue and UV-light-sensitive photodetectors.The vapor-liquid-solid (VLS) growth of guided ZnSe NWs was carried out in a two-zone tube furnace system (see the Experimental Section for details). NWs grow horizontally and aligned from the Au catalyst pattern edges or from dispersed nanoparticles. Their typical diameter varied between 10 and Single-cry...

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“…Of the prototypical materials, VO 2 is promising as it undergoes a metal-insulator transition (MIT) and the resistance changes by orders of magnitude around 340 K. In VO 2 nano to microstructures5678910111213, the coupling of the MIT with mechanical789, optical13, thermal12 and electronic properties911 can be used in tunable resonators, optical switchers, electronic and thermo-sensing devices. Furthermore, only a few atomic percent of the hydrogen- or oxygen-intercalation and -desorption in VO 2 cause drastic changes in the transport properties, equal to that caused by inducing the MIT14151617181920.…”

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Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

Sasaki

Ueda

Kanki

et al. 2015

Sci Rep

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Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides.

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Self-Assembly and Horizontal Orientation Growth of VO2 Nanowires

Cited by 51 publications

References 26 publications

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Modulating Photoluminescence of Monolayer Molybdenum Disulfide by Metal–Insulator Phase Transition in Active Substrates

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High‐Performance Blue–UV Photodetectors

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

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