Dynamic surface anneal: activation without diffusion

Jennings, D.; Mayur, A. J.; Parihar, V.; Liang, Haifan; Mcintosh, R.; Adams, B.; Thomas, Tony; Hunter, Aaron; Trowbridge, Tammy L.; Achutharaman, Raman; Thakur, R. P. S.

doi:10.1109/rtp.2004.1441892

Cited by 10 publications

(5 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To obtain a better understanding of the physical processes during FLA, temperature simulations have been performed in a couple of reports, e.g. in [43][44][45][46][47]. The optical properties of the sample determine the fraction of light which is finally absorbed by the system and the corresponding absorption depth profile.…”

Section: Temperature Distributionsmentioning

confidence: 99%

“…However, FLA can therefore build up enormous temperature gradients within the material with the expected implications, namely different thermal expansions at different temperatures and the formation of strain. The consequences will be manifold: strain relaxation will lead to bowing, elastic deformations partly turn into plastic ones accompanied by the introduction of additional defects if the strain exceeds the yield stress [20], and thin films may even delaminate if the thermal mismatch to the substrate is too large [45].…”

Section: Temperature Distributionsmentioning

confidence: 99%

See 1 more Smart Citation

A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

Thermal processing in the subsecond range comprises modern, non-equilibrium annealing techniques which allow various material modifications at the surface without affecting the bulk. Flash lamp annealing (FLA) is one of the most diverse methods for short-time annealing with applications ranging from the classical field of semiconductor doping to the treatment of polymers and flexible substrates. It still continues to extend its use to other material classes and applications, and is becoming of interest for an increasing number of users. In this review we present a short, but comprehensive and consistent picture of the current state-of-the-art of FLA, sometimes also called pulsed light sintering. In the first part we take a closer look at the physical and technological background, namely the electrical and optical specifications of flash lamps, the resulting temperature profiles, and the corresponding implications for process-relevant parameters such as reproducibility and homogeneity. The second part briefly considers the various applications of FLA, starting with the classical task of defect minimization and ultrashallow junction formation in Si, followed by further applications in Si technology, namely in the fields of hyperdoping, crystallization of thin amorphous films, and photovoltaics. Subsequent chapters cover the topics of doping and crystallization in Ge and silicon carbide, doping of III-V semiconductors, diluted magnetic semiconductors, III-V nanocluster synthesis in Si, annealing of transparent conductive oxides and high-k materials, nanoclusters in dielectric matrices, and the use of FLA for flexible substrates.

show abstract

Section: Temperature Distributionsmentioning

confidence: 99%

Section: Temperature Distributionsmentioning

confidence: 99%

A review of thermal processing in the subsecond range: semiconductors and beyond

Rebohle

Prucnal

Skorupa

2016

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…These previous studies feature heavy P incorporation and high P activation. In this work, ultralow ρ c are further explored on Si:P by i) dynamic surface anneal (DSA) [5], ii) Ge preamorphization + Ti silicidation (PAI+TiSi x ) [6][7][8], and iii) TiO x based metal-insulator-semiconductor (MIS) contact [9][10][11]. Combining the first two solutions, record-low ρ c of 1.5×10 -9 Ω•cm 2 is achieved on heavily doped Si:P, which meets the ρ c requirement for the N7 node and beyond [12].…”

Section: Introductionmentioning

confidence: 99%

1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

Schaekers

Rosseel

et al. 2015

2015 IEEE International Electron Devices Meeting (IEDM)

View full text Add to dashboard Cite

Record-low contact resistivity (ρ c ) for n-Si, down to 1.5×10 -9 Ω•cm 2 , is achieved on Si:P epitaxial layer. We confirm that Ti silicidation reduces the ρ c for n-Si, while an additional Ge pre-amorphization implantation (PAI) before Ti silicidation further extends the ρ c reduction. In situ doped Si:P with P concentration of 2×10 21 cm -3 is used as the substrate, and dynamic surface anneal (DSA) boosts P activation. In addition, TiO x based metal-insulator-semiconductor (MIS) contact is also studied on Si:P but is found to suffer from low thermal stability.

show abstract

“…The processes of thermal treatment are an integral part of the micro-and nanoelectronics technology. A lamp-based chamber is one of the main units of the rapid treatment equipment that is widely used at present time for thermal processes including a post-implantation annealing [1] [2], diffuse doping [3] [4], crystallization of amorphous films [5] [6], contact annealing [7] [8], oxidation [9] [10] and etc. Thermal treatment processes differ in duration and radiation power from parts per million of second and peak power until 100 MW on flesh-annealing [3] [4] to tens of seconds and radiation power ~0.1 kW on low-temperature annealing [11].…”

Section: Introductionmentioning

confidence: 99%

The Effect of Quartz Window on Bistability of the Silicon Wafer in Lamp-Based Reactor

Prigara¹,

Kupriyanov²,

Ovcharov³

2020

MSCE

View full text Add to dashboard Cite

The effect of a quartz plate (window) on the silicon wafer temperature is studied in the conditions of the combined thermal transfer in a lamp-based chamber for the rapid thermal treatment (RTP) set up. The chamber for RTP is simulated by a radiative-closed thermal system including the influence of quartz window as a spectral filter of lamp emission and a source of emitted thermal radiation. Energy equations for thermal fluxes involved in the heat input and output from the working wafer and quartz window are solved in spectral approximation. The transfer characteristics that are defined by the temperature dependencies of the silicon wafer and the quartz window on the temperature of the heater are accounted. It is shown that temperature bistability in the silicon wafer initiates an induced bistability into the quartz window that does not reveal bistable behavior because of the linear temperature dependence of its total optical characteristics. A possibility for simulation of the quartz window by spectral restriction of the heater radiation is confirmed. The availability of the weak bistable effect in the mode of zero effective heat exchange coefficient of a non-radiative component of the thermal flux removed from the working wafer has been obtained.

show abstract

Dynamic surface anneal: activation without diffusion

Cited by 10 publications

References 3 publications

A review of thermal processing in the subsecond range: semiconductors and beyond

A review of thermal processing in the subsecond range: semiconductors and beyond

1.5×10−9 Ωcm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

The Effect of Quartz Window on Bistability of the Silicon Wafer in Lamp-Based Reactor

Contact Info

Product

Resources

About