2003 IEEE International Solid-State Circuits Conference, 2003. Digest of Technical Papers. ISSCC.
DOI: 10.1109/isscc.2003.1234225
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Dynamic-sleep transistor and body bias for active leakage power control of microprocessors

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Cited by 84 publications
(78 citation statements)
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“…However as the technology scales down, more aggressive leakage reduction techniques are required. As a promising technique, runtime power gating (RTPG) has drawn more attention recently [5][6][7][8][9][10]. As shown in Figure 1, RTPG turns off the power gate once it detects sufficient idleness in circuit workload, even when the circuit is in the active mode.…”
Section: Introductionmentioning
confidence: 99%
“…However as the technology scales down, more aggressive leakage reduction techniques are required. As a promising technique, runtime power gating (RTPG) has drawn more attention recently [5][6][7][8][9][10]. As shown in Figure 1, RTPG turns off the power gate once it detects sufficient idleness in circuit workload, even when the circuit is in the active mode.…”
Section: Introductionmentioning
confidence: 99%
“…As leakage is becoming a growing concern in the current microprocessor designs, several leakage control mechanisms have been studied [9][11] [19] [20]. All these mechanisms try to reduce leakage when the circuit is in idle state.…”
Section: Background and Related Workmentioning
confidence: 99%
“…Many leakage control techniques have been studied [9][11] [19] [20], power gating being one of the most prominent ones. Power gating cuts the supply voltage to the idle functional units, resulting in leakage energy savings.…”
Section: Introductionmentioning
confidence: 99%
“…Supply and threshold voltage optimization, in the context of low power CMOS circuit design, is an area of active current research; see, e.g., Anis et al (2003), Chabini et al (2003), Chen et al (2001), Kao et al (2002), Pant et al (2001), and Srivastava and Sylvester (2004). Many approaches to low power CMOS design have been proposed in the literature, including design with multiple supply and threshold voltages (Chang and Pedram 1997;Jung et al 2003;Kim et al 2003a, b;Krishnamurthy and Carley 1997;Marković et al 2004;Sirichotiyakul et al 2002;Srivastava and Sylvester 2004;Yeh et al 2001), multiple threshold CMOS (MTCMOS) (Anis et al 2002(Anis et al , 2003Calhoun et al 2004;Kao and Chandrakasan 2000), variable threshold CMOS (VTCMOS) via adaptive body biasing (Im et al 2003, Kao et al 2002, Tschanz et al 2003, Yang et al 1997, dynamic threshold CMOS (DTCMOS) (Assaderaghi et al 1997), joint device sizing and V dd /V th assignment (Augsburger and Nikolić 2002a, b;Chen and Sarrafzadeh 2002;Hung et al 2004;Ketkar and Sapatnekar 2002;Karnik et al 2002;Liu et al 2004;Nguyen et al 2003;Pant et al 2001), dynamic frequency scaling (Lu et al 2002), supply voltage scaling (Bellaouar et al 1998), and transistor stacking (Johnson et al 2002.…”
Section: Supply and Threshold Voltage Optimizationmentioning
confidence: 99%