Dynamic Characterization of Parallel-Connected High-Power IGBT Modules

Chen, Nan; Chimento, F.; Nawaz, Muhammad; Wang, Liwei

doi:10.1109/tia.2014.2330075

Cited by 63 publications

(17 citation statements)

References 8 publications

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“…On the other hand, paralleling semiconductor devices has been a common approach to achieve higher device current ratings in industrial power converters. [5][6][7][8] Different devices can also be parallel connected together to configure a hybrid switch for fully utilizing their respective characteristics, in addition to simply improving the current ratings. [9][10][11][12][13][14][15][16][17][18] One of the earliest hybrid device concepts is the utilization of SiC Schottky barrier diodes (SBDs) as the antiparallel freewheeling diode for Si IGBTs, which has been widely used in industry in the past decade due to the lower diode reverse recovery losses and IGBT turn-on losses compared to employing the conventional Si fast recovery diodes.…”

Section: Introductionmentioning

confidence: 99%

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Katebi

Weise

2017

IEEE Trans. Ind. Electron.

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Section: Introductionmentioning

confidence: 99%

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Katebi

Weise

2017

IEEE Trans. Ind. Electron.

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“…Thus, this method is unfeasible for practical application. Thus, an alternative approach is therefore required to monitor MOSFET [14]- [18]. This paper provides an innovative methodology to supervise the MOSFET power device without intruding the MOSFET for real-time condition monitoring.…”

Section: Introductionmentioning

confidence: 99%

Analysis and Modeling for the Real-Time Condition Evaluating of MOSFET Power Device Using Adaptive Neuro-Fuzzy Inference System

Xu¹,

Yang²,

Chen³

et al. 2019

IEEE Access

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Aging has been generally regarded as one of the principal root causes of power device failure, due to it makes the performance of power device degradative, which will directly influence the electrical-thermal performances of the power device. Thus, it is essential to assess the condition to improve the operating reliability of power device. In this paper, a finite-element analysis (FEA) model of MOSFET is built for simulation. Then, the main impact of failure on the overall characteristics of the MOSFET power device will be discussed and analyzed based on the FEA simulation model of MOSFET. In addition, some suitable feature parameters that can indicate the condition of MOSFET are selected and a methodology is proposed for on-line evaluating the real-time condition without intruding the power device by recognizing the aging rate. In this method, MOSFET is deemed as a whole system considering only external feature parameters, and all feature parameters are classified as the inputs, while the aging rate is considered as the output. First, the feature parameters are extracted by especial measurement circuits, a model is built for evaluating the condition of MOSFET using the adaptive neuro-fuzzy inference system, and a reasonable evaluation criterion is established. Then, a case of practical application study for the monitoring method is illustrated based on the evaluation model. Finally, the real-time condition can be monitored, and the condition grade of aging can be evaluated so that the operator can take some measures to maintain the power device by means of this method. The results of a practical application validated the effectiveness of the proposed methodology.

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“…Therefore, it is necessary to consider paralleling two or more switching devices in order to achieve the desired high current rating, thermal dispersion, and lower conduction loss. The concept of paralleling switching devices has been widely discussed in the literature [1][2][3][4][5][6]. However, current unbalance may arise because of paralleled switching devices, because of mismatched parasitic parameters, which vary according to the circuit layout.…”

Section: Introductionmentioning

confidence: 99%

Oscillation analysis and current peak reduction in paralleled SiC MOSFETs

Nanamori

Sugihara

Yamamoto

2018

IET Circuits, Devices & Systems

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Parallel connection of power metal oxide semiconductor field effect transistors (MOSFETs) is often used in the high current side of power conversion systems to obtain a thermal dispersion and low conduction losses. However, a parallel connection may lead to a current unbalance due to the difference of parasitic parameters and switching characteristics of the paralleled devices. The current unbalance generates current oscillations, and in the worst case, it may lead to complete destruction of the power devices. This study analyses an inherent oscillation of two paralleled SiC MOSFETs, under current unbalance conditions. Based on the proposed analysis, it is found that the parasitic inductance is the main cause of the coupled oscillation, which is composed of two different oscillation frequencies. In this study, the coupled oscillation leads to a difference of peak currents between paralleled devices. The circuit conditions, considering the parasitic inductances, are investigated to suppress the coupled oscillation. As a result, a reduction of the common parasitic inductance allows preventing the coupled oscillation and to suppress the peak combined current of paralleled devices. Moreover, a peak current reduction by 37.8% can be achieved, as a result of eliminating the coupled oscillation.

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Dynamic Characterization of Parallel-Connected High-Power IGBT Modules

Cited by 63 publications

References 8 publications

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Analysis and Modeling for the Real-Time Condition Evaluating of MOSFET Power Device Using Adaptive Neuro-Fuzzy Inference System

Oscillation analysis and current peak reduction in paralleled SiC MOSFETs

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