A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Abstract

This paper is NOT THE PUBLISHED VERSION; but the author's final, peer-reviewed manuscript. The published version may be accessed by following the link in the citation below.

A hybrid Si IGBT and SiC MOSFET module development

“…Si IGBTs share part of current from SiC MOSFET, and the tail current happens again. The same phenomenons can be found from [9] and [11]. It means that, IGBT chips are turned on in ZVS mode, but not fully ZVS in turn off phase.…”

“…To overcome the challenges, the combination of IGBT and MOSFET devices was investigated by compensating disadvantages [7]. Among them, hybrid switches based on parallel connection between Si IGBT and SiC MOSFET were studied [8][9][10]. In these paper, the losses and costs of hybrid switches have been investigated and verified.…”

Improved Space Vector Modulation for Neutral-Point Balancing Control in Hybrid-Switch-Based T-Type Neutral-Point-Clamped Inverters With Loss and Common-Mode Voltage Reduction

“…Because of more paralleled semiconductors, more gate drivers and more gating signals are required. [12] mentioned that the Si-SiC hybrid switch structure should ensure the safe operation area (SOA) of the SiC MOSFET. Table I illustrates the current dependent operation in [12].…”

“…tABle I current dependent operAtIon of the hyBrId-swItch-BAsed Inverter [12] MOSFET for half-bridge switch positions. With SPWM, the clamping switches are soft-switching under the unity power factor, and thus, the utilization of Si IGBTs does not increase the switching loss.…”

A 1200 V/200 A Half-Bridge Power Module Based on Si IGBT/SiC MOSFET Hybrid Switch

“…However, the reported HySs are commonly based on the discrete semiconductors and the parasitic inductors of the connection severely restrict their performance [13], [14]. A 6.5 kV/40 A HyS power module was developed in [15]. The HyS power module contained only one switch and only the double pulse test was conducted.…”