Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale

Diehl, W.; Brick, P.; Chatterjee, Sangam; Horst, S.; Hantke, K.; Rühle, W. W.; Stolz, W.; Thränhardt, A.; Koch, S. W.

doi:10.1063/1.2748079

Cited by 12 publications

(7 citation statements)

References 9 publications

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“…These measurements can then be compared to rate equation simulations based on parameters stemming from microscopic simulations, as demonstrated e.g. for 1, 040 nm disk lasers (Diehl et al 2007). …”

Section: Relaxation Oscillations Delay and Decaymentioning

confidence: 99%

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Schwarz

2008

Opt Quant Electron

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The near-field lateral intensity distribution of 405 nm (Al,In)GaN laser diodes is measured in time and wavelength domain. Spectral properties, relaxation oscillations, and filaments are observed. A thermally induced change of the refractive index profile is found to be the driving force behind changes in the dynamic mode configuration. With rate equations those effects can be described in first approximation.

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Section: Relaxation Oscillations Delay and Decaymentioning

confidence: 99%

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Schwarz

2008

Opt Quant Electron

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“…For the latter we use the experimentally estab- lished value of 0.1 nm/K. 12,21,24 This resonator shift introduces an additional temperature dependence on the modal gain on top of the thermal modifications of the material gain. The presence of an AR coating reduces this effect because the subcavity resonance is less pronounced.…”

Section: Steady-state Characteristicsmentioning

confidence: 99%

Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers

Kühn

Thränhardt

Bückers

et al. 2009

Journal of Applied Physics

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Articles you may be interested inOn the measurement of the thermal impedance in vertical-external-cavity surface-emitting lasers Effect of the properties of an intracavity heat spreader on second harmonic generation in vertical-external-cavity surface-emitting laserThe influence of an antireflection coating on the input-output power characteristics and the switch-on dynamics of a vertical-external-cavity surface-emitting laser is investigated numerically with an effective rate-equation simulation based on microscopic many-body calculations for the optical gain/absorption and carrier losses. The simulations show a significantly higher threshold and a slower switch-on dynamics for the antireflection coated devices. These differences are caused by a reduction in the mode amplitude at the position of the active medium due to a less pronounced subcavity.

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“…This is common practice in electrically-driven semiconductor devices and has been used in particular for devices used for micro-displaytype projection/display applications [103,104]. Recent pulsed pumping experiments [105,106] have shown that this method improves the maximum output power achievable with a given SDL chip as long as the pulse duration is shorter than a few hundred nanoseconds, the typical transient time associated with SDL heating. It was also demonstrated that the use of a heatspreader has negligible impact on laser performance for these considered timescales [105].…”

Section: Power Scalingmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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Dynamic behavior of 1040nm semiconductor disk lasers on a nanosecond time scale

Cited by 12 publications

References 9 publications

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

(Al,In)GaN laser diodes in spectral, spatial, and time domain: near-field measurements and basic simulations

Numerical study of the influence of an antireflection coating on the operating properties of vertical-external-cavity surface-emitting lasers

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

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