Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez, S.; Hastie, Jennifer E.; Guina, Mircea; Okhotnikov, Oleg G.; Dawson, Martin D.

doi:10.1002/lpor.200810042

Cited by 154 publications

(78 citation statements)

References 137 publications

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“…Bandgap engineering of the gain structure in a variety of III-V alloys provides broad spectral coverage from the visible to the mid-IR. SDLs are broadly tunable (∼16 nm in the red [7]to>100 nm in the mid-IR [8]) about any particular central wavelength. Moreover, their high intracavity fields and short carrier lifetimes (approximately nanoseconds) are well suited to low-noise, intracavity nonlinear conversion: e.g., frequency-doubling [7] and intracavity-pumping of OPOs [9].…”

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confidence: 99%

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

et al. 2011

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21, 2011; revised February 22, 2011; accepted February 22, 2011; posted February 25, 2011 (Doc. ID 141410); published March 18, 2011A KGdðWO 4 Þ 2 Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5:6 W of absorbed diode pump power, and output power up to 0:8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.

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confidence: 99%

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

et al. 2011

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“…SHG in cavities can become highly efficient as a result of the high optical field intensity within the resonator as compared to the external laser beam, and can attain conversion efficiencies of more than 80% [Ou92,Pas94]. In consequence, the flexibility of the VECSEL design enables the use of GaAs based nanostructures for high power, CW applications in the visible wavelength range [Cal09].…”

Section: High-power Vertical External-cavity Surface-emitting Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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“…Since years, the VeCSEL concept is pointed out as a technology of choice for beyond-state-of-the-art laser light sources, 1, 2 demonstrating wavelength flexibility, [3][4][5][6][7][8] high power, [8][9][10][11] high spatial, temporal and polarization coherence, 7, 10 CW or fs ultra-short pulsed operation, [12][13][14][15][16] compactness and functionalities. [17][18][19] The targeted coherent state is typically a common circular low divergence fundamental gaussian TEM00 mode, linearly polarized state, single frequency state or modelocked comb.…”

Section: Introductionmentioning

confidence: 99%

Generation of new spatial and temporal coherent states using VECSEL technology: VORTEX, high order Laguerre-Gauss mode, continuum source

Sagnes¹,

Myara²,

Garnache³

et al. 2017

International Conference on Space Optics — ICSO 2014

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Since years, the VeCSEL concept is pointed out as a technology of choice for beyond-state-of-the-art laser light sources. The targeted coherent state in CW is typically the common gaussian TEM 00 , single frequency, linearly polarized lightstate. In this work, we take advantage of the VeCSEL technology for the generation of other kinds of coherent states, thanks to the insertion of intracavity functions, such as low-loss intensity and phase filters integrated on a semiconductor chip. This technological development permitted to demonstrate very pure high-order Laguerre-Gauss mode, both degenerate and non-degenerate(vortex)modes, preserving the coherence properties of usual TEM 00 VeCSELs. This technology paves the way for the generation of other coherences (Bessel beams) or new functionnalities (wavelength filtering, etc.). We also explore new time domain coherence : owing to a high gain semiconductor chip design and the insertion of intracavity AOM, we demonstrated the first Frequecy-Shifted-Feedback VeCSEL, with a broadband coherence state as wide as 300 GHz.

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Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Cited by 154 publications

References 137 publications

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Continuous-wave Raman laser pumped within a semiconductor disk laser cavity

Design and Realization of Novel GaAs Based Laser Concepts

Generation of new spatial and temporal coherent states using VECSEL technology: VORTEX, high order Laguerre-Gauss mode, continuum source

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