Continuous-wave operation of a diamond Raman laser, intracavity-pumped by a diode-pumped InGaAs semiconductor disk laser (SDL), is reported. The Raman laser, which utilized a 6.5-mm-long synthetic single-crystal diamond, reached threshold for 5.3 W of diode laser pump power absorbed by the SDL. Output power up to 1.3 W at the first Stokes wavelength of 1227 nm was demonstrated with excellent beam quality and optical conversion efficiency of 14.4% with respect to absorbed diode laser pump power. Broad tuning of the Raman laser output between 1217 and 1244 nm was achieved via intracavity tuning of the SDL oscillation wavelength.
21, 2011; revised February 22, 2011; accepted February 22, 2011; posted February 25, 2011 (Doc. ID 141410); published March 18, 2011A KGdðWO 4 Þ 2 Raman laser was pumped within the cavity of a cw diode-pumped InGaAs semiconductor disk laser (SDL). The Raman laser threshold was reached for 5:6 W of absorbed diode pump power, and output power up to 0:8 W at 1143 nm, with optical conversion efficiency of 7.5% with respect to the absorbed diode pump power, was demonstrated. Tuning the SDL resulted in tuning of the Raman laser output between 1133 and 1157 nm.
We demonstrate a diamond Raman laser intracavity-pumped by a red semiconductor disk laser (~675 nm) for laser emission at around 740 nm. Output power up to 82 mW of the Stokes-shifted field was achieved, limited by the available pump power, with an output coupling of 1.5%. We also report wavelength tuning of the diamond Raman laser over 736 - 750 nm.
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