Low threshold cw laser emission from a semiconductor disk laser emitting at 1260nm was demonstrated. Using high quality metal-organic vapor phase epitaxy (GaIn) (NAs) material, nonradiative processes could be minimized. As a consequence, threshold pump power densities have been reduced down to 5kW∕cm2. The capture efficiency of carriers into the quantum wells was found to be uncritical.
The nanosecond dynamics of near-infrared semiconductor disk lasers is investigated experimentally and theoretically. Lasing and photoluminescence following barrier pumping are analyzed. Their spectral and temporal features such as luminescence overshoot and clamping, delay of lasing onset, and redshift of the emission are explained by a rate equation model taking into account the microscopic gain and luminescence
InN continues to be a topic of great interest, particularly with respect to the issues surrounding its bandgap energy. To further explore this material and its properties, we have grown 200–300 nm InN films by a plasma-assisted molecular beam epitaxy (PAMBE) technique on a variety of substrates, including (0001) sapphire, (100) InAs, and both (100) and (111) YSZ. Single-crystal films regardless of quality all show the commonly reported broad luminescence feature in the range of 0.7 to 0.8 eV, although we have also observed this feature in polycrystalline films. Growth on (100) InAs and (100) YSZ was motivated by a desire to explore cubic InN; in both cases growth appears to be initially cubic, but a mixture of hexagonal and cubic phases is detected in the final layer.
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