Dynamic avalanche in bipolar power devices

Lutz, Josef; Baburske, Roman

doi:10.1016/j.microrel.2011.10.018

Cited by 52 publications

(40 citation statements)

References 14 publications

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“…Generally, in terms of the avalanche breakdown during the IGBT turn off, no high plasma exists inside the n --base region will distinctly improve the avalanche ruggedness of the device [45]. As a result, the designed static voltage blocking capability Vrated of the IGBT can be more fully utilized under a self-turn-off process or a turn-off process during the steady state.…”

Section: Fig10 1700v/1000a Igbt Avalanche Breakdown Curve and Currementioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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IGBT short-circuit failure modes have been under research for many years, successfully paving the way for device short-circuit ruggedness improvement. The aim of this paper is to classify and discuss the recent contributions about IGBT short-circuit failure modes, in order to establish the current state of the art and trends in this area. First, a 3D-SCSOA is introduced as the IGBT's operational boundary to divide the short-circuit failure modes of device into short-circuit VDC/Vrated-ISC SOA limiting and short-circuit endurance time limiting groups. Then, the discussion is centered on currently reported IGBT short-circuit failure modes in terms of their relationships with the 3D-SCSOA characteristics. In addition, further investigation on the interaction of 3D-SCSOA characteristics is implemented to motivate advanced contributions in future dependency research of device short-circuit failure modes on temperature. Consequently, a comprehensive and thoughtful review of where the development of short-circuit failure mode researches of IGBT stands and is heading is provided.Index terms-High power IGBTs, Short-circuit failure mode, 3D-SCSOA, Self-heating, Temperature dependencyNone of the material in this paper has been published or is under consideration for publication elsewhere.

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Section: Fig10 1700v/1000a Igbt Avalanche Breakdown Curve and Currementioning

confidence: 99%

Investigation and Classification of Short-Circuit Failure Modes Based on Three-Dimensional Safe Operating Area for High-Power IGBT Modules

Chen

Iannuzzo

et al. 2018

IEEE Trans. Power Electron.

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“…Due to the collector current flowing through the device, a large amount of free holes are presented in the depletion layer. When the device conducts high current, the concentration of the free holes will be very closed to the N-base doping concentration [31]. This must be taken into account in the model.…”

Section: Influences Of the Device Physical Characteristicsmentioning

confidence: 99%

“…Substituting (31) into (34) with x * = 0 and x * = W H , the hole currents I p0 at x * = 0 and I p1 at x * = W H are obtained, as shown in (35) and (36).…”

Section: B Buffer Layer Modelingmentioning

confidence: 99%

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Modeling Inductive Switching Characteristics of High-Speed Buffer Layer IGBT

Xue

Zhang

2017

IEEE Trans. Power Electron.

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In this study, a physics-based compact model for high speed buffer layer insulated gate bipolar transistor (IGBT) is proposed. The model utilizes the 1-D Fourier-based solution of ambipolar diffusion equation (ADE) implemented in MATLAB and Simulink. Based on the improved understanding on the inductive switching behavior of high speed buffer layer IGBT, the ADE is solved for all injection levels instead of high-level injection only as usually done. Assuming high-level injection condition in the buffer layer, the excess carrier transport, redistribution and recombination in the buffer layer are redescribed. Moreover, some physical characteristics such as the low conductivity of N-base at turn-on transient and free holes appeared in the depletion layer during turn-off process are also considered in the model. Finally, The double-pulse switching tests for a commercial field stop (FS) IGBT and a light punch-through (LPT) carrier stored trench bipolar transistor (CSTBT) are used to validate the proposed model. The simulation results are compared with experiment results and good agreement is obtained.Index Terms-insulated gate bipolar transistor (IGBT), power semiconductor modeling, field stop (FS) IGBT, light punchthrough (LPT) carrier stored trench bipolar transistor (CSTBT), physics-based IGBT model.

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“…N eff = N D + p, leads to the increase of electric field strength. Therefore, the dynamic avalanche will occur, even the voltage is much lower than the static breakdown voltage [15,16]. In [4], the differences between the formation reasons and the variation behaviors of cathode side and anode side filaments were explained by analyzing the plasma front velocities during reverse recovery, and the results have shown that the filaments at the anode and cathode sides are both relevant to the negative differential resistance (NDR) in the I-V characteristic.…”

Section: Influence Of Carrier Lifetime On the Current Filamentmentioning

confidence: 99%