Dual-quadrant photodetection in topological insulator and silicon-based heterojunction (n-Bi2Te2Se/p-Si)

Self-powered topological insulator Bi2Te3/Ge heterojunction photodetector driven by long-lived excitons transfer

“…In fact, the twodimensional (2D) artificial heterostructures have been proven to be a perfect platform to investigate and regulate the interlayer transfer of excitons as well, from which the desired optoelectronic characteristics can be realized [12,13]. Moreover, due to the robust qualities of the Dirac surface state, it can be maintained at the heterointerface between TIs and other semiconductors, which makes it possible to produce the long-lived excitons underneath the TIs [14][15][16]. Alternatively, based on sub-bandgap internal photoemission, the implementation of TI-based hybrid heterostructures may offer the possibility of design and fabrication of original nearinfrared optoelectronic devices [17][18][19].…”

Research progress on topological material-based photodetectors

“…This is several orders of magnitude more responsive than previously reported TI photodetectors, suggesting that Sb 2 SeTe 2 has great potential in the field of photodetectors. In 2021, G. K. Maurya et al 79 integrated Bi 2 Te 2 Se films and a silicon substrate to form a transverse heterojunction photodetector. Studies have shown that the Bi 2 Te 2 Se/Si heterojunction has a good photoelectric response in the range of visible light to near-infrared, and under 900 nm light, the R is 19.06 A W À1 under positive bias (+2 V), the D* is 8 Â 10 11 Jones.…”

Bi2Te2Se and Sb2Te3 heterostructure based photodetectors with high responsivity and broadband photoresponse: experimental and theoretical analysis

“…33 Van der Waals epitaxy of Bi 2 Te 2 Se/Bi 2 O 2 Se vertical heterojunctions for a high-performance photodetector with a high responsivity of 2.21 × 10 −3 A W −1 at 532 nm wavelength has been reported by Sijie Yang et al 34 Furthermore, at 900 nm wavelength, G. K. Maurya et al have reported a 19.06 A W −1 dual-quadrant photodetection in a topological insulator and silicon-based heterojunction (n-Bi 2 Te 2 Se/p-Si). 35…”

“…33 Van der Waals epitaxy of Bi 2 Te 2 Se/Bi 2 O 2 Se vertical heterojunctions for a high-performance photodetector with a high responsivity of 2.21 Â 10 À3 A W À1 at 532 nm wavelength has been reported by Sijie Yang et al 34 Furthermore, at 900 nm wavelength, G. K. Maurya et al have reported a 19.06 A W À1 dual-quadrant photodetection in a topological insulator and silicon-based heterojunction (n-Bi 2 Te 2 Se/p-Si). 35 This work investigates the electronic and optical properties of the experimentally prepared Sb 2 Te 3 /Bi 2 Te 2 Se heterojunction using density functional theory (DFT). In the electronic properties calculation, the band structure, density of states (DOS) and partial density of states (PDOS) of the Sb 2 Te 3 , Bi 2 Te 2 Se, and Sb 2 Te 3 /Bi 2 Te 2 Se heterostructure are calculated by considering the spin-orbit coupling and van der Waals interaction in the quintuple layers (QL).…”