2020 IEEE International Symposium on Circuits and Systems (ISCAS) 2020
DOI: 10.1109/iscas45731.2020.9181135
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Dual-Interlocked-Storage-Cell-Based Double-Node-Upset Self-Recoverable Flip-Flop Design for Safety-Critical Applications

Abstract: This paper presents a novel dual-interlocked storagecell (DICE)-based double-node-upset (DNU) self-recoverable, namely DURI-FF, in the nano-scale CMOS technology. The master latch of the DURI-FF cell consists of three transmission gates (TGs) and three interlocked DICEs with three common nodes. The common nodes are connected to TGs for value initialization. The slave latch of the DURI-FF cell comprises six TGs, six inverters and three interlocked DICEs. The outputs of the inverters respectively feed the intern… Show more

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Cited by 5 publications
(10 citation statements)
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“…As can be seen, the maximum pulse width of SET decreases as the voltage supply increases (higher conductivity of the transistors) [7]. This dependency should be considered when it is necessary to suppress the SET pulse in sensitive applications [30][31][32].…”
Section: Figurementioning
confidence: 98%
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“…As can be seen, the maximum pulse width of SET decreases as the voltage supply increases (higher conductivity of the transistors) [7]. This dependency should be considered when it is necessary to suppress the SET pulse in sensitive applications [30][31][32].…”
Section: Figurementioning
confidence: 98%
“…As can be seen, the maximum pulse width of SET decreases as the voltage supply increases (higher conductivity of the transistors) [7]. This dependency should be considered when it is necessary to suppress the SET pulse in sensitive applications [30][31][32]. It is worth mentioning that in [24], aiming at masking SET, a Schmitt Trigger Inverter is used in transparent mode; however, it has a large impact on delay because of the hysteresis property.…”
Section: Figurementioning
confidence: 99%
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“…Therefore, this paper mainly focuses on radiation hardening against SNUs and DNUs. To tolerate SNUs and DNUs with the RHBD approach, many novel structures, such as latches [5][6][7][8][9], static random-access memories (SRAMs) [10][11] and FFs [12][13][14][15][16][17][18], have been proposed. Among them, DICEs are widely used [19].…”
Section: Introductionmentioning
confidence: 99%
“…Because conventional latches usually can be severely affected by radioactive particles, the conventional FFs composed of these latches are vulnerable to radioactive particles, which can induce SNUs and DNUs. To tolerate SNUs and DNUs with the RHBD approach, a series of FFs, such as those in [12][13][14][15][16][17][18], have been proposed. However, these FFs still suffer from some problems in terms of reliability and overhead issues:…”
Section: Introductionmentioning
confidence: 99%