Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications

Welstand, R.B.; Pappert, S.A.; Sun, Chen; Zhu, Jintian; Liu, Y.Z.; Yu, Paul K. L.

doi:10.1109/68.541576

Cited by 53 publications

(18 citation statements)

References 10 publications

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“…This is true for moderate values of the reverse bias voltage, as seen from Fig. 71(b) [110]. On the other hand, it can also be seen from Fig.…”

Section: ) Optical Carrier Recovery and Re-use (Ocrr)supporting

confidence: 57%

“…bias voltage applied to it [110], as shown in the architecture of Fig. 72, where the bias voltage applied to the EAM in the RAP is switched based on whether photo-detection of the DL optical signal from the BS or transmission of the UL optical signal to the BS is taking place.…”

Section: ) Optical Carrier Recovery and Re-use (Ocrr)mentioning

confidence: 99%

“…Welstand et al [110] The bias voltage was switched to obtain half-duplex operation when using a modulator-cum -photodetector, as shown in Fig. 72.…”

mentioning

confidence: 99%

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Performance Improvement and Cost Reduction Techniques for Radio Over Fiber Communications

Thomas

El‐Hajjar

Hanzo

2015

IEEE Commun. Surv. Tutorials

139

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Abstract-Advanced cost reduction and performance improvement techniques conceived for Radio Over Fiber (ROF) communications are considered. ROF techniques are expected to form the backbone of the future 5G generation of wireless networks. The achievable link performance and the associated deployement cost constitute the most salient metrics of a ROF architecture. In this paper, we commence by providing a rudimentary overview of the ROF architecture and then elaborate on ROF techniques designed for improving the attainable system performance. We conclude by describing the ROF techniques conceived for reducing the ROF system installation costs.

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“…This is true for moderate values of the reverse bias voltage, as seen from Fig. 71(b) [110]. On the other hand, it can also be seen from Fig.…”

Section: ) Optical Carrier Recovery and Re-use (Ocrr)supporting

confidence: 57%

Section: ) Optical Carrier Recovery and Re-use (Ocrr)mentioning

confidence: 99%

See 1 more Smart Citation

Performance Improvement and Cost Reduction Techniques for Radio Over Fiber Communications

Thomas

El‐Hajjar

Hanzo

2015

IEEE Commun. Surv. Tutorials

139

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“…The modulation and detection all rely on the electro-absorption (EA) effect of a IIIV-based quantum well (QW) epi-layer, which is integrated on a 6-channel arrayed waveguide grating (AWG) (de)multiplexer of a 1.6-nm channel spacing. Since the modulators and the detectors share the same EA structure, a duplex link can be achieved in the proposed transceiver [28], [29], which is not possible using normal all-silicon modulators or germanium detectors. An external laser was used for the measurement.…”

Section: Introductionmentioning

confidence: 99%

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

Wu¹,

Huang²,

Keyvaninia³

et al. 2016

Opt. Express

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A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 Â 0.65 mm 2 for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved.

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“…In addition, the electroabsorption effect can also be used to build a high speed photodetector, which possesses a similar structure as that of an EAM. 3 This dual function property enables, e.g., on-chip optical transceivers 4 and compact optoelectronic oscillators (OEO). 5 Recently, silicon photonics integrated with electronic devices fabricated in complementary (CMOS) production lines has become an enabling technology for the realization of integrated optical systems.…”

mentioning

confidence: 99%

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

Huang

et al. 2016

Applied Physics Letters

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In this paper, a new method for realizing a low driving voltage electroabsorption modulator based on the band-filling effect is demonstrated. The InP-based electroabsorption modulator is integrated using DVS-BCB adhesive bonding on a silicon-oninsulator waveguide platform. When the electroabsorption modulator is forward biased, the band-filling effect occurs, which leads to a blue shift of the exciton absorption spectrum while the absorption strength stays almost constant. In static operation, an extinction ratio of more than 20 dB with 100 mV bias variation is obtained in an 80 µm long device. In dynamic operation, 1.25 Gbps modulation with a 6.3 dB extinction ratio is obtained using only a 50 mV peak-to-peak driving voltage. The band-filling effect provides a novel method for realizing ultra-low-driving-voltage electroabsorption modulators.Quantum-confined Stark effect (QCSE) based electroabsorption modulators (EAM) exhibit high speed, low energy consumption, relatively high extinction ratio and small footprint.1,2 These features make EAMs widely used in optical communications. In addition, the electroabsorption effect can also be used to build a high speed photodetector, which possesses a similar structure as that of an EAM.3 This dual function property enables, e.g., on-chip optical transceivers 4 and compact optoelectronic oscillators (OEO).5 Recently, silicon photonics integrated with electronic devices fabricated in complementary (CMOS) production lines has become an enabling technology for the realization of integrated optical systems.6,7 High speed InP-based EAMs have also been successfully implemented in silicon photonic circuits though hybrid integration technology. 1,4,8,9 However, for silicon photonics, it is important to reduce the power consumption. Because the transition energy consumed by an EAM is proportional to the driving voltage squared, 1 a low driving voltage EAM is required in silicon photonics. On the other hand, an EAM directly driven by the low voltage swing signal from an advanced digital logical CMOS driver can also save the energy consumption from the electrical signal amplifier. Recently, sub-100 mV driving voltage silicon modulators based on a high Q microring resonator or a photonic crystal cavity have been demonstrated.10,11 However, those devices are very sensitive to fabrication imperfections and cannot be used as photodetectors. For QCSE based EAMs, it is challenga) Electronic mail: liu.liu@coer-scnu.org b) Electronic mail: sailing@kth.se ing to reduce the driving voltage without an increase in the modulator size and insertion loss. Even when using a complex slow-light Bragg waveguide to enhance lightmatter interaction, 12 it is still hard to integrate with silicon photonics and reduce the driving voltage to the level of silicon modulators. Therefore, it is desirable to find a new, simple way to reduce the driving voltage without requiring complex fabrication procedures.The band-filling effect in modulation-doped multiple quantum-wells (MQWs) has been studied since 1980s. 13...

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Dual-function electroabsorption waveguide modulator/detector for optoelectronic transceiver applications

Cited by 53 publications

References 10 publications

Performance Improvement and Cost Reduction Techniques for Radio Over Fiber Communications

Performance Improvement and Cost Reduction Techniques for Radio Over Fiber Communications

All-optical NRZ wavelength conversion based on a single hybrid III-V/Si SOA and optical filtering

Low driving voltage band-filling-based III-V-on-silicon electroabsorption modulator

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