Abstract:After a short general description of the chemical etching of semiconductors the mechanisms of defect-selective etching are described in detail. Two distinct mechanisms that 1ead to the formation of etch pits and etch hillocks on dislocations emerging at a semiconductor surface are discussed. The principles of the formation of defect-related etch features are described for the HF-CrO3-H2O etching system used for etching of GaAs. A model of surface reactions is presented and the influence of illumination during … Show more
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