Undoped p-type GaSb single crystals were annealed at 550-600 • C for 100 h in ambient antimony. The annealed GaSb samples were investigated by Hall effect measurement, glow discharge mass spectroscopy (GDMS), infrared (IR) optical transmission and photoluminescence (PL) spectroscopy. Compared with the as-grown GaSb single crystal, the annealed GaSb samples have lower hole concentrations and weak native acceptor related PL peaks, indicating the reduction of the concentration of gallium antisite related native acceptor defects. Consequently, the below gap infrared transmission of the GaSb samples is enhanced after the thermal treatment. The mechanism about the reduction of the native defect concentration and its influence on the material property were discussed.
Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski (LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.
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