Drain-engineered hot-electron-resistant device structures: a review

Sanchez, Julian J.; Hsueh, Kan‐Lin; DeMassa, Thomas A.

doi:10.1109/16.24357

Cited by 85 publications

(10 citation statements)

References 19 publications

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“…In a forward-biased FED, the drain voltage and the neighboring gate have opposite polarities; therefore, pinchoff does not occur in FEDs, and they do not suffer from hot-electron effects, unlike short-channel FETs [2], [12]. As we show in this paper, the I on /I off ratio of FEDs can be at least two orders of magnitude higher than that of SOI-MOSFETs.…”

Section: Device Structurementioning

confidence: 76%

Performance Assessment of Nanoscale Field-Effect Diodes

Manavizadeh

Raissi

Soleimani

et al. 2011

IEEE Trans. Electron Devices

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We propose a new structure called a side-contacted field-effect diode (FED). The fabrication of this new structure is simple, and it offers good electrical characteristics. Furthermore, a comprehensive analysis of FEDs is presented. The effect of heavydoping-induced band-gap narrowing on the performance of FEDs is investigated. Our results show that the calculated I on /I off ratio is at least two orders of magnitude larger than that obtained from models neglecting this effect. The figures of merit including intrinsic gate delay time, the energy-delay product, and the subthreshold slope have been studied. Our numerical investigations of the scaling of FEDs indicate that, in the nanometer regime, FEDs have a higher I on /I off ratio. The results demonstrate that FEDs are interesting candidates for future logic applications. Index Terms-Band gap narrowing, double gate, field effect diode (FED), nano transistor, short channel effects, side-contacted.

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Section: Device Structurementioning

confidence: 76%

Performance Assessment of Nanoscale Field-Effect Diodes

Manavizadeh

Raissi

Soleimani

et al. 2011

IEEE Trans. Electron Devices

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“…A FED is a structure with two gates over its channel called GS and GD (see pinch-off does not occur in FEDs and they do not suffer from hot electron effects, unlike short channel FETs [8,9]. Figure 1: Schematic structures of (a) regular and (b) modified FED.…”

Section: Field Effect Diode Structurementioning

confidence: 98%

A comprehensive study of nanoscale Field Effect Diodes

Manavizadeh

Pourfath

Raissi

et al. 2011

2011 12th Intl. Conf. On Thermal, Mechanical &Amp; Multi-Physics Simulation and Experiments in Microelectronics and Microsystem

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The performance of nanoscale Field Effect Diode as a function of the doping concentration and the gate voltage is investigated. Our numerical results show that the lon/loff ratio which is a significant parameter in digital application can be varied from 101 to 104 as the doping concentration of source/drain regions increased from 1016 to 1Q2Icm-3. The figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic application.

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“…Progress parameters describe the influence of process variations. Examples are the LDD configuration [8] (Lightly Doped Drain, for hot carriers) and copper doping of aluminium (electromigration). Together with group (5) parameters, they are used in process level or physical simulation and some can be optimised by process engineers for maximum reliability.…”

Section: Critical Parameters For Circuit Reliability Simulationmentioning

confidence: 99%

On the design of a reliability circuit simulator

Verweij

Lunenborg

1995

Microelectronics Reliability

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Abstract--This paper describes the outcome of a study into the feasibility of a reliability circuit simulator for ICs in general and the critical parameters involved in particular. The necessary conditions are formulated that have to be fulfilled before any construction of the reliability simulator is meaningful or can be done at all. It has been found that failure mechanisms in the wear-out regime meet these conditions. Next, a general approach is given to make a simulator. This approach is actually derived from circuit simulator activities on hot carrier degradation and electromigration, respectively. Finally, the different groups of parameters are defined.

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Drain-engineered hot-electron-resistant device structures: a review

Cited by 85 publications

References 19 publications

Performance Assessment of Nanoscale Field-Effect Diodes

Performance Assessment of Nanoscale Field-Effect Diodes

A comprehensive study of nanoscale Field Effect Diodes

On the design of a reliability circuit simulator

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