2012
DOI: 10.1088/1674-4926/33/8/084007
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Double-π fully scalable model for on-chip spiral inductors

Abstract: A novel double-π equivalent circuit model for on-chip spiral inductors is presented. A hierarchical structure, similar to that of MOS models is introduced. This enables a strict partition of the geometry scaling in the global model and the model equations in the local model. The major parasitic effects, including the skin effect, the proximity effect, the inductive and capacitive loss in the substrate, and the distributed effect, are analytically calculated with geometric and process parameters in the local-le… Show more

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Cited by 2 publications
(3 citation statements)
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“…According to the Eqs. (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14), the number of independent elements in Figure 1 is reduced form 28 to only seven (L s1 , L p11 , R p11 , C ox1 , R sub1 , C sub1 , C s ). Then, these seven independent model elements will be calculated by the scalable model comprises of the geometry and process parameters.…”
Section: Scalable Modeling Methodologymentioning
confidence: 99%
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“…According to the Eqs. (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14), the number of independent elements in Figure 1 is reduced form 28 to only seven (L s1 , L p11 , R p11 , C ox1 , R sub1 , C sub1 , C s ). Then, these seven independent model elements will be calculated by the scalable model comprises of the geometry and process parameters.…”
Section: Scalable Modeling Methodologymentioning
confidence: 99%
“…The model parameters of one‐π topology can be directly extracted from measured S‐parameters, but one‐π model fails to represent the decrease of effective series resistance at high frequencies. Two‐π model overcomes this drawback , but it doubles the number of model elements and makes the extraction of parameter more complicated.…”
Section: Introductionmentioning
confidence: 99%
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