Double-scaled potential profile in a group-III nitride alloy revealed by Monte Carlo simulation of exciton hopping

Abstract

The temperature dependences of the peak position and width of the photoluminescence band in Al0.1In0.01Ga0.89N layers were explained by Monte Carlo simulation of exciton localization and hopping. The introduction of a doubled-scaled potential profile due to inhomogeneous distribution of indium allowed obtaining a good quantitative fit of the experimental data. Hopping of excitons was assumed to occur through localized states distributed on a 16 meV energy scale within the In-rich clusters with the average energy in these clusters dispersed on a larger (42 meV) scale.

Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

“…The quantitative agreement with the experimental data requires an additional inhomogeneous broadening ͑⌫ = 12 meV͒ to be introduced. 10 The dash-dotted line shows the simulated dependence without inhomogeneous broadening ͑⌫͒. The further increase of the linewidth above 175 K is attributed to the participation of the longitudinal optical phonons in the radiative transition not accounted for in the model.…”

“…[7][8][9] Here, we report the W-shaped dependence of the PL. 10 We model these temperature behaviors of the emission band and compare the results with the experimental data. We use a Monte Carlo simulation which is based on the excitonic kinetics.…”

“…We use a Monte Carlo simulation which is based on the excitonic kinetics. 10 The samples were ZnO and CdZnO QWs. Both of these QWs were grown with laser molecular-beam epitaxy on ScAlMgO 4 substrates.…”

Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

“…Delocalization of excitons with microwave irradiation was observed. Temperature behavior of the Stokes shift and PL line width of weakly excited InGaN based structures was shown to be consistent with the model of phonon--assisted exciton hopping through the randomly distributed states confined in the band potential minima within large In-rich regions [9]. Figure 2a shows the temperature variation of the PL spectra (for cw 2.5 W/cm 2 excitation by a He-Cd laser).…”

Ultraviolet light emitting diodes

“…The exciton behavior is simulated by random selection of either hopping to another localized state with the rate calculated using Eq. (2) or radiative annihilation from the current state with the rate [86] with permission.…”