Monte Carlo simulation of localization dynamics of excitons in ZnO and CdZnO quantum well structures

Abstract

Localization dynamics of excitons was studied for ZnOMgZnO and CdZnOMgZnO quantum wells (QWs). The experimental photoluminescence (PL) and absorption data were compared with the results of Monte Carlo simulation in which the excitonic hopping was modeled. The temperature-dependent PL linewidth and Stokes shift were found to be in a reasonable agreement with the hopping model, with accounting for an additional inhomogeneous broadening. The density of localized states used in the simulation for the CdZnO QW was consistent with the absorption spectrum. © 2006 American Institute of Physics

Ultrafast spectroscopy of ZnO/ZnMgO quantum wells

“…For example, Makino et al showed that by adding just a few percent of Cd to the ZnO QWs, the temperature dependence of the PL changed dramatically due to the role played by the Cd atoms in localising excitons. In that case, they were able to model the predominant dynamics using carrier hopping models [48][49][50]. Hence, rather than try to discuss the role of defects and localisation effects for all possible cases, we refer the reader to the existing literature on this work: see e.g.…”

“…Hence, rather than try to discuss the role of defects and localisation effects for all possible cases, we refer the reader to the existing literature on this work: see e.g. [27,34,44,46,[48][49][50][51][52][53][54].…”

Structure and optical properties of multi-quantum wells grown on Si(111) substrates

“…It is well known that the excitons in ZnO-based MQW structures show strong stability with respect to ZnO epilayers or bulk crystal, due to the enhancement of the binding energy and reduction of the exciton-phonon coupling caused by quantum confinement [5][6][7][8]. Large exciton binding energy can assure more efficient excitonic emission at higher temperature even room temperature and thus reduces the threshold of the stimulated emission process [9,10].…”

Nonlinear Optical Properties in a Strained Zn<SUB><I>x</I></SUB>Cd<SUB>1–<I>x</I></SUB>O/Zn<SUB>0.1</SUB>Mg<SUB>0.9</SUB>O Quantum Dot

“…CdZnO quantum wells on ScAlMgO 4 substrates have been grown. 6 Jeon et al 7 investigated the electronic and optical properties of Li:CdZnO/MgZnO structures with spontaneous polarization, and piezoelectric polarization, and ferroelectric dipole moment made by Li dopant and also they investigated the many body optical gain with spontaneous polarization and piezoelectric polarization and ferroelectric dipole moment using the non-Markovian gain model with many-body effects. The internal electric field due to piezoelectric and spontaneous polarizations in wurtzite CdZnO-based materials are very important to study high performance laser diode operation.…”