Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Pu, Yong; Zhu, Jiliang; Zhu, Xiaohong; Luo, Yuansheng; Wang, Mingsong; Li, Xuhai; Liu, Jing; Zhu, Jianguo; Xiao, Dingquan

doi:10.1063/1.3549116

Cited by 22 publications

(10 citation statements)

References 32 publications

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“…4,5,26,27 The dependence of the dielectric non-linearity on the stress, shown in Fig. 5, suggests that the applied biaxial stress of PZT films controls domain wall motion, leading to the deviation between the experimental results and the predictions.…”

Section: Discussionmentioning

confidence: 92%

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Lee

Nastasi

2012

Journal of Applied Physics

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The influence of an ion-beam induced biaxial stress on the ferroelectric and dielectric properties of Pb(Zr,Ti)O3 (PZT) films is investigated using the ion beam process as a novel approach to control external stress. Tensile stress is observed to decrease the polarization, permittivity, and ferroelectric fatigue resistance of the PZT films whose structure is monoclinic. However, a compressive stress increases all of them in monoclinic PZT films. The dependence of the permittivity on stress is found not to follow the phenomenological theory relating external forces to intrinsic properties of ferroelectric materials. Changes in the ferroelectric and dielectric properties indicate that the application of a biaxial stress modulates both extrinsic and intrinsic properties of PZT films. Different degrees of dielectric non-linearity suggests the density and mobility of non-180o domain walls, and the domain switching can be controlled by an applied biaxial stress and thereby influence the ferroelectric and dielectric properties.

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Section: Discussionmentioning

confidence: 92%

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Lee

Nastasi

2012

Journal of Applied Physics

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“…The 2 domain switching processes then occur rapidly at a large compressive strain. This rapid change appears to be different from most of comparable experimental results because we only capture the intrinsic effect of the single crystalline material system in a simulation model and no extrinsic nucleation site for new domains is included, unlike in experiments where there are always plenty of such nuclei.…”

Section: Resultsmentioning

confidence: 70%

Strain effects on domain structures in ferroelectric thin films from phase‐field simulations

et al. 2018

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Strain and applied external electric fields are known to influence domain evolution and associated ferroelectric responses in ferroelectric thin films. Here, phase‐field simulations are used to predict equilibrium domain structures and polarization‐field (P‐E) hysteresis loops of lead zirconate titanate (PZT) thin films under a series of mismatch strains, ranging from strongly tensile to strongly compressive. In particular, the evolution of domains and the P‐E curves under different applied strains reveal the mesoscale mechanism, the appearance of in‐plane polarization during domain switching, that is responsible for a relatively small coercive field and remnant polarization. A Landau energy distribution is analyzed to better understand the domain evolution under various strain conditions. The results provide guidance for choice of mismatched strains to yield the desired P‐E hysteresis loops and the domain structures.

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“…The SIMS study showed some Mn diffusion into PLZST but those of Ni and Ga were negligible. Previous reports in literature on the effects of Mn diffusion into FE Pb(Zr,Ti)O 3 , (Pb,La)(Zr,Ti)O 3 and Pb(Zr,Sn,Ti)O 3 show that it promotes the double hysteresis loop in out‐of‐plane P‐E characteristics 19–21. Consequently, Mn diffusion in PLZST would not have caused the AFE to FE transformation as observed in Figure 3b.…”

Section: Resultsmentioning

confidence: 76%

Ferroelastic Strain Induced Antiferroelectric‐Ferroelectric Phase Transformation in Multilayer Thin Film Structures

Mirshekarloo

Yao

Sritharan

2012

Adv Funct Materials

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Coupling effects among mechanical, electrical and magnetic parameters in thin fi lm structures including ferroic thin fi lms provide exciting opportunity for creating device functionalities. For thin fi lms deposited on a substrate, their mechanical stress and microstructure are usually determined by the composition and processing of the fi lms and the lattice and thermal mismatch with the substrate. Here it is found that the stress and structure of an antiferroelectric (Pb 0.97 ,La 0.02 )(Zr 0.90 ,Sn 0.05 ,Ti 0.05 )O 3 (PLZST) thin fi lm are changed completely by a ferroelastic strain in a magnetic shape memory (MSM) alloy Ni-Mn-Ga (NMG) thin fi lm on the top of the PLZST, despite the existence of the substrate constraint. The ferroelastic strain in the NMG fi lm results in antiferroelectric (AFE) to ferroelectric (FE) phase transformation in the PLZST layer underneath. This fi nding indicates a different strategy to modulate the structure and function for multilayer thin fi lms and to create unprecedented devices with ferroic thin fi lms.

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Double hysteresis loop induced by defect dipoles in ferroelectric Pb(Zr0.8Ti0.2)O3 thin films

Cited by 22 publications

References 32 publications

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Ferroelectric properties of Pb(Zr,Ti)O3 films under ion-beam induced strain

Strain effects on domain structures in ferroelectric thin films from phase‐field simulations

Ferroelastic Strain Induced Antiferroelectric‐Ferroelectric Phase Transformation in Multilayer Thin Film Structures

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